1) Minority Carrier Diffusion Length or Lifetime
少子扩散长度或寿命
2) diffuse length of few carrier running electron
少子扩散长度
1.
It is expounded that basic principle and calculate method,and diffuse length of few carrier running electron for GaP LPE sample flat by use of EBIC is determined.
阐述了E-BIC的基本原理和计算方法,并利用EBIC对一组GaP绿色LED用LPE样片进行少子扩散长度测量。
3) minority carrier diffusion
少数载流子扩散长度
4) Minority carrier lifetime
少子寿命
1.
The minority carrier lifetime(τ) scan mapping along the multicrystalline ingot was obtained by means of Microwave Photo Conductive Decay (μ-PCD).
应用微波光电导衰减仪(μ-PCD)测得了铸造多晶硅硅锭沿生长方向少子寿命的分布图。
2.
All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
3.
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法 (PCD)研究了热氧化钝化对直拉硅少子寿命的影响 。
5) carrier lifetime
少子寿命
1.
Oxygen and carbon behavior and minority-carrier lifetimes in multicrystalline silicon(mc-Si) were investigated by means of FTIR and QSSPCD after three step annealing.
对多晶硅片进行三步退火处理,用傅里叶红外光谱仪(FTIR)和准稳态光电导衰减法(QSSPCD)测硅片退火前后氧碳含量及少子寿命,并对单晶硅片做同样处理进行比较。
2.
Through the investigation for variations of minor carrier lifetime before and after light irradiation and annealing and the correlation between light degradation and boron and oxygen concentrations, it was clarified that boron and interstitial oxygen were major components of defect center for light degradation of Bdoped cSi solar cells.
通过光照及退火处理前后少子寿命变化的研究以及光衰减与硼和氧浓度关系的研究,表明引起掺硼晶硅太阳电池光照衰减的主要因素是硼和间隙氧的存在。
6) τ-the life time of minority carriers
τ-少子寿命
补充资料：少子
分子式：
CAS号：
性质：在掺杂半导体，即非本征半导体中，对电导贡献很小的载汉子，简称少子，如n型半导体的空穴，p型半导体的电子。
CAS号：
性质：在掺杂半导体，即非本征半导体中，对电导贡献很小的载汉子，简称少子，如n型半导体的空穴，p型半导体的电子。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条