1) donor impurity
施主杂质
1.
The ground state binding energy of a polaron bound to a donor impurity near the interface of a semiconductor heterojunection is investigated with a modified LLP variational method by considering the influence of a triangular potential,the electron phonon and impurity phonon interaction,including the effect of half space bulk longitudinal and interface optical phonon modes.
对半导体单异质结系统 ,引入三角势近似异质结势 ,考虑电子、杂质与声子的相互作用 ,利用改进的 LLP变分法讨论在界面附近束缚于正施主杂质的极化子基态能量 。
2.
A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a triangular potential and the screened Coulombic impurity potential.
对半导体单异质结系统 ,引入三角势近似异质结势 ,考虑电子对杂质库仑势的屏蔽影响 ,利用变分法讨论在界面附近束缚于正施主杂质的单电子基态能量 。
2) donors
[英]['dəunə] [美]['donɚ]
施主杂质
1.
BaTiO3 ceramics were prepared by conventional solid state processing with MnCO3 and Co2O3 doped as acceptor,La2O3,Nb2O5 and Bi2(SnO3)3 doped as donors.
通过传统的球磨工艺,分别以MnCO3、Co2O3为受主杂质,La2O3、Nb2O5、Bi2(SnO3)3为施主杂质对BaTiO3陶瓷进行掺杂。
2.
The experiment shows that the dielectric properties of BaTiO3 ceramics are related with the rate of donors n and acceptors p.
通过传统的球磨工艺,以Co2O3为受主杂质和La2O3、Nb2O5、Bi2(SiO3)3为施主杂质,对BaTiO3系陶瓷进行掺杂。
4) donor impurity state
施主杂质态
5) shallow donor impurity
浅施主杂质
1.
Studies on property of shallow donor impurity in symmetrical double nanometer-wires under compressive stress
外加压力时双纳米线中浅施主杂质的性质
6) hydrogenic donor impurity
类氢施主杂质
1.
Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in Ⅲ-nitrides quantum dots;
III族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响
补充资料：大施主
【大施主】
（术语）于一切之人行大施者。无量寿经上曰：“我于无量劫不为大施主，普济诸贫穷，誓不成正觉。”
（术语）于一切之人行大施者。无量寿经上曰：“我于无量劫不为大施主，普济诸贫穷，誓不成正觉。”
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条