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1)  n type CdSe
n型CdSe
2)  (CdSe)n and(HgTe)n clusters
(CdSe)n和(HgTe)n团簇
3)  CdSe CdS
CdSe-CdS
4)  n-type
n型
1.
Structural characterization and properties of co-doping n-type CVD diamond films;
共掺杂n型CVD金刚石薄膜的结构和性能
2.
Effects of Pancuronium on Whole-cell N-type Calcium Currents of Rat Superior Cervical Ganglia;
泮库溴铵对大鼠颈上交感神经元全细胞N型钙通道电流的影响及其机制的探讨
3.
Low resistivity n-type diamond films were prepared by boron and phosphorus co-doping with the ion implantation method.
用离子注入方法,在CVD金刚石薄膜中共注入硼离子和磷离子,得到了电阻率较低的n型金刚石薄膜。
5)  n type
n型
1.
n type boron and sulfur co doped diamond films with Low resistivtiy are prepared by microwave CVD method.
利用微波气相沉积方法制备了低电阻率的 n型硫掺杂和硼硫共掺杂金刚石薄膜 。
6)  CdSe nanocrystals
CdSe纳米晶
1.
Electroluminescence of CdSe Nanocrystals Synthesized by Aqueous Solution;
水溶性CdSe纳米晶的电致发光研究
2.
With trioctylphosphine and oleic acid as the ligands of Se and Cd,high-quality CdSe nanocrystals with controlled particle size were synthesized in a 260~300 ℃ noncoordinating solvent octadecene under argon flow.
在氩气保护下,用三辛基亚磷酸和油酸分别作为Se和Cd的配位体,在260~300℃的十八烯溶液中合成了尺寸可控的CdSe纳米晶。
3.
The results of XPS confirmed the formation of CdSe nanocrystals,and the images of TEM demonstrated that the average size of CdSe nanocrystals was less than 10 nm and the aggregation occurred among the nanocrystals.
以巯基乙酸为稳定剂,在水相中制备了CdSe纳米晶水溶胶,并用X射线光电子能谱和透射电子显微镜对其进行了表征,证明了CdSe纳米晶的形成。
补充资料:cadmium selenide CdSe
分子式:
CAS号:

性质:白色到棕色结晶体,立方或六方晶结构。密度5.81g/cm3。熔点1350℃。在空气或酸中分解,几乎不溶于水,剧毒,遇高温、明火或酸接触放出硒化氢气体。制取方法:高温下硒和镉直接反应;硒化氢和镉盐溶液作用;氧化镉和硒和草酸或草酸溶液作用。用于颜料、陶瓷、油漆和发光材料,用于制作光电材料、电子发射器和光谱分析、太阳能电池、激光器等。

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