1) CdSe single crystal
CdSe单晶体
1.
High quality CdSe single crystals with excess Cd(10mm in diameter and 45mm in length) were grown using modified sublimation technique,i.
本文报道了用改进的垂直气相法 (多级提纯垂直气相法 )生长富Cd的CdSe单晶体 ,并对晶体的性能进行了观测 ,其电阻率为 10 7Ωcm量级 ,电子陷阱浓度为 10 8cm- 3量级 ,第一次报道了 (110 )面的腐蚀形貌。
2) CdSe single crystals
CdSe单晶体
1.
The experimental results indicated that the CdSe single crystals grown in our laboratory are always n-type compound semiconductor with a hexagonal system and the band gap about 1.
通过变温(20~300K)霍尔效应测量,研究了CdSe单晶体的电阻率ρ(T)、载流子浓度n(T)、霍尔系数RH(T)和霍尔迁移率μH(T)的温度依赖关系。
2.
Growth of CdSe Single Crystals and Room Temperature Nuclear Radiation Detectors;
CdSe单晶体是最有前途的室温核辐射探测器材料之一，但由于没有制备出高质量的CdSe单晶体，加上没有成熟的半导体材料加工技术与器件制作工艺，人们对CdSe探测器没有进行深入的研究。
4) CdSe crystal
CdSe晶体
1.
The infrared frequency doubles parameters and element processes of CdSe crystals were studied.
根据非线性光学原理和折射率色散关系,从理论上计算出CdSe晶体的有效非线性系数和倍频元件相位匹配角与基频光波长(5。
5) CdSe nanocrystals
CdSe纳米晶
1.
Electroluminescence of CdSe Nanocrystals Synthesized by Aqueous Solution;
水溶性CdSe纳米晶的电致发光研究
2.
With trioctylphosphine and oleic acid as the ligands of Se and Cd,high-quality CdSe nanocrystals with controlled particle size were synthesized in a 260～300 ℃ noncoordinating solvent octadecene under argon flow.
在氩气保护下,用三辛基亚磷酸和油酸分别作为Se和Cd的配位体,在260~300℃的十八烯溶液中合成了尺寸可控的CdSe纳米晶。
3.
The results of XPS confirmed the formation of CdSe nanocrystals,and the images of TEM demonstrated that the average size of CdSe nanocrystals was less than 10 nm and the aggregation occurred among the nanocrystals.
以巯基乙酸为稳定剂,在水相中制备了CdSe纳米晶水溶胶,并用X射线光电子能谱和透射电子显微镜对其进行了表征,证明了CdSe纳米晶的形成。
6) nanocrystalline CdSe
纳晶CdSe
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条