晶界腐蚀,small angle boundary,在线英语词典,英文翻译,专业英语

1) small angle boundary

晶界腐蚀

2) grain boundary

晶界

Dynamic process simulation of solute grain boundary segregation;

溶质原子晶界偏聚动力学过程的数值模拟

Methodological probe into grain boundary etching of molybdenum disilicide based materials;

二硅化钼基材料的晶界腐蚀方法探讨

3) crystal boundary

晶界

The chemical composition at the crystal boundary of transparent ceramics was observed and the concentration distribution of rare earth oxide in stable state was measured by electron microprobe analysis.

以ＥＰＭＡ法观测透明陶瓷晶界处的化学组成及稀土氧化物的定态浓度分布，用非平衡态热力学理论分析晶界偏析行为。

Al_2O_3distributed along crystal boundary,silicate impurities,separated carbon compound and σ phase together brought about crystal boundary weakening and resulted in high sensitivity for interdendritic corrosion.

沿晶界分布的A l2O3和硅酸盐杂质、析出碳化物、σ相,它们共同构成了晶界弱化的因素,致使晶间腐蚀的敏感性加大。

The application of electroscope and pulse polishing technology enables the field ion microscope atomprobe (FIM AP) on the sample to locate itself successfully the crystal boundary, moreover, makes the dialing subatomprobe in the range to be efficiently analyzed.

应用电子显微镜和脉冲抛光技术 ,成功控制了晶界在场离子显微镜—原子探针试样中的位置 ,使其处于场离子显微镜—原子探针的有效分析范围内。

4) grain-boundary

晶界

Study on the grain-boundary strengthening model of polycrystalline materials;

多晶体材料的晶界强化模型研究

Based on the existing grain-boundary segregation thermodynamics and kinetics, and according to thermodynamics second law, Fick's diffusion laws, and local equilibrium theory, a model is developed to calculate the solute grain- boundary segregation kinetics.

本文在现有晶界偏聚热力学和动力学模型的基础上,根据热力学定律、菲克扩散定律及局部平衡理论,建立起溶质原子晶界偏聚动力学模型。

Some of recent progress were summarized, including the preparation of nanosized powder, highly strengthened ceramic with submicrometer grain structure obtained via spark-plasma sintering method, improved conductivity of grain-boundary via precursor scavenging of two-stage sintering, and a pseudoternary stabilized 5%In2O3-8%Y2O3-ZrO2(all percentages in formula are mole percentage) system.

稳定氧化锆作为固体氧化物燃料电池的电解质是最好的可用材料,介绍了这方面的研究进展,包括:纳米粉的制备,火花等离子体烧结法获得亚微米晶粒结构的高强度陶瓷,二次烧结前体清除法改善晶界的电导率和一个准三元系稳定的5% In2O3-8%Y2O3-ZrO2(式中均为摩尔百分数)。

5) grain boundaries

晶界

The effect of grain boundaries on magnetic and transport properties in colossal magnetoresistance particle film;

晶界对庞磁电阻颗粒薄膜的磁学和输运性能的影响

Segregation and interaction of rare earth and iron elements on grain boundaries in ZA27 alloys;

ZA27合金中稀土及铁的晶界偏聚与交互作用

In order to reveal the behaviors of Fe and RE atoms on grain boundaries in ZA27 alloy theoretically, the atomic structure model of high angle grain boundary of α phase in ZA27 alloy was set up by using the concept of coincidence-site lattice(CSL).

为从理论上揭示铁、稀土元素在锌铝合金晶界处的行为本质,建立了ZA27合金中α相大角度重位点阵晶界模型,利用递归法(Recursion)计算了晶界的电子结构(状态密度、费米能级、结构能)。

6) grain boundary equation

晶界方程

参考词条

枝晶界晶界结构晶界隔离晶界渗透 ∑3~n晶界晶界工程晶界物相晶界缺陷 Al晶界连续晶界晶界设计晶界效应晶界显示晶界损伤叙述版本长而宽油布雨衣

补充资料：半导体晶片腐蚀

半导体晶片腐蚀
semiconductor wafer etching

5102+6HF一HZ〔SIF6〕+ZHZO 这种酸性腐蚀反应速度快，腐蚀后晶片表面光亮，但几何尺寸精度较差，而且废气和废水对环境会造成严重污染。硅在常温下也可与碱(苛性钠、苛性钾)溶液发生化学反应: 51+ZNaOH+HZO一Na:5103+ZH:今 51+ZNaOH+ZHZO一NaZSIO;+3H:个碱性腐蚀反应速度较慢，易于控制，废液易于处理，对环境污染较轻。但腐蚀后晶片表面光亮度较差。化学腐蚀也用于晶片清洗中，晶片在每一步加工后都要进行清洁处理，以去除上道工序中所砧污的外来物和晶体粉末。在晶片切割和研磨后，一般采用化学腐蚀或化学腐蚀和机械擦拭相结合的方法来除去晶片表面的拈污物。抛光后的硅片，通常利用浓硫酸和过氧化氢的混合溶液，以强氧化反应除去晶片表面的有机物和金属杂质。随后用氢氟酸去除硅片表面的氧化硅膜。用氨水、过氧化氢和水的混合液可有效地除去晶片表面的微量有机物和金属杂质砧污，此种混合液对于除去表面的颗粒比较有效。盐酸、过氧化氢和水的混合液也被用来除去金属杂质的拈污。晶片经过化学腐蚀后，最终用去离子水冲洗就能获得洁净的晶片表面。 (尤重远)bandaot一jlngPlan fUsh}半导体晶片腐蚀(Semieonduetor wafer eteh-ing)晶片在研磨加工后，利用酸或碱与晶片发生非选择性化学反应，去除晶片表面因研磨加工所造成的机械损伤层的半导体晶片加工工序。以硅单晶片的化学腐蚀处理过程为例。在通常条件下，硅与硝酸、氢氟酸单独不发生化学反应。但硅与硝酸和氢氟酸的混合液能发生下列化学反应: 51+4HNO:-一510:+ZHZO+4NO:个

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

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1) small angle boundary 晶界腐蚀 2) grain boundary 晶界 1. Dynamic process simulation of solute grain boundary segregation; 溶质原子晶界偏聚动力学过程的数值模拟 2. Methodological probe into grain boundary etching of molybdenum disilicide based materials; 二硅化钼基材料的晶界腐蚀方法探讨 3) crystal boundary 晶界 1. The chemical composition at the crystal boundary of transparent ceramics was observed and the concentration distribution of rare earth oxide in stable state was measured by electron microprobe analysis. 以ＥＰＭＡ法观测透明陶瓷晶界处的化学组成及稀土氧化物的定态浓度分布，用非平衡态热力学理论分析晶界偏析行为。 2. Al_2O_3distributed along crystal boundary,silicate impurities,separated carbon compound and σ phase together brought about crystal boundary weakening and resulted in high sensitivity for interdendritic corrosion. 沿晶界分布的A l2O3和硅酸盐杂质、析出碳化物、σ相,它们共同构成了晶界弱化的因素,致使晶间腐蚀的敏感性加大。 3. The application of electroscope and pulse polishing technology enables the field ion microscope atomprobe (FIM AP) on the sample to locate itself successfully the crystal boundary, moreover, makes the dialing subatomprobe in the range to be efficiently analyzed. 应用电子显微镜和脉冲抛光技术 ,成功控制了晶界在场离子显微镜—原子探针试样中的位置 ,使其处于场离子显微镜—原子探针的有效分析范围内。 4) grain-boundary 晶界 1. Study on the grain-boundary strengthening model of polycrystalline materials; 多晶体材料的晶界强化模型研究 2. Based on the existing grain-boundary segregation thermodynamics and kinetics, and according to thermodynamics second law, Fick's diffusion laws, and local equilibrium theory, a model is developed to calculate the solute grain- boundary segregation kinetics. 本文在现有晶界偏聚热力学和动力学模型的基础上,根据热力学定律、菲克扩散定律及局部平衡理论,建立起溶质原子晶界偏聚动力学模型。 3. Some of recent progress were summarized, including the preparation of nanosized powder, highly strengthened ceramic with submicrometer grain structure obtained via spark-plasma sintering method, improved conductivity of grain-boundary via precursor scavenging of two-stage sintering, and a pseudoternary stabilized 5%In2O3-8%Y2O3-ZrO2(all percentages in formula are mole percentage) system. 稳定氧化锆作为固体氧化物燃料电池的电解质是最好的可用材料,介绍了这方面的研究进展,包括:纳米粉的制备,火花等离子体烧结法获得亚微米晶粒结构的高强度陶瓷,二次烧结前体清除法改善晶界的电导率和一个准三元系稳定的5% In2O3-8%Y2O3-ZrO2(式中均为摩尔百分数)。 5) grain boundaries 晶界 1. The effect of grain boundaries on magnetic and transport properties in colossal magnetoresistance particle film; 晶界对庞磁电阻颗粒薄膜的磁学和输运性能的影响 2. Segregation and interaction of rare earth and iron elements on grain boundaries in ZA27 alloys; ZA27合金中稀土及铁的晶界偏聚与交互作用 3. In order to reveal the behaviors of Fe and RE atoms on grain boundaries in ZA27 alloy theoretically, the atomic structure model of high angle grain boundary of α phase in ZA27 alloy was set up by using the concept of coincidence-site lattice(CSL). 为从理论上揭示铁、稀土元素在锌铝合金晶界处的行为本质,建立了ZA27合金中α相大角度重位点阵晶界模型,利用递归法(Recursion)计算了晶界的电子结构(状态密度、费米能级、结构能)。 6) grain boundary equation 晶界方程参考词条枝晶界晶界结构晶界隔离晶界渗透 ∑3~n晶界晶界工程晶界物相晶界缺陷 Al晶界连续晶界晶界设计晶界效应晶界显示晶界损伤叙述版本长而宽油布雨衣补充资料：半导体晶片腐蚀半导体晶片腐蚀 semiconductor wafer etching 5102+6HF一HZ〔SIF6〕+ZHZO 这种酸性腐蚀反应速度快，腐蚀后晶片表面光亮，但几何尺寸精度较差，而且废气和废水对环境会造成严重污染。硅在常温下也可与碱(苛性钠、苛性钾)溶液发生化学反应: 51+ZNaOH+HZO一Na:5103+ZH:今 51+ZNaOH+ZHZO一NaZSIO;+3H:个碱性腐蚀反应速度较慢，易于控制，废液易于处理，对环境污染较轻。但腐蚀后晶片表面光亮度较差。化学腐蚀也用于晶片清洗中，晶片在每一步加工后都要进行清洁处理，以去除上道工序中所砧污的外来物和晶体粉末。在晶片切割和研磨后，一般采用化学腐蚀或化学腐蚀和机械擦拭相结合的方法来除去晶片表面的拈污物。抛光后的硅片，通常利用浓硫酸和过氧化氢的混合溶液，以强氧化反应除去晶片表面的有机物和金属杂质。随后用氢氟酸去除硅片表面的氧化硅膜。用氨水、过氧化氢和水的混合液可有效地除去晶片表面的微量有机物和金属杂质砧污，此种混合液对于除去表面的颗粒比较有效。盐酸、过氧化氢和水的混合液也被用来除去金属杂质的拈污。晶片经过化学腐蚀后，最终用去离子水冲洗就能获得洁净的晶片表面。 (尤重远)bandaot一jlngPlan fUsh}半导体晶片腐蚀(Semieonduetor wafer eteh-ing)晶片在研磨加工后，利用酸或碱与晶片发生非选择性化学反应，去除晶片表面因研磨加工所造成的机械损伤层的半导体晶片加工工序。以硅单晶片的化学腐蚀处理过程为例。在通常条件下，硅与硝酸、氢氟酸单独不发生化学反应。但硅与硝酸和氢氟酸的混合液能发生下列化学反应: 51+4HNO:-一510:+ZHZO+4NO:个说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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