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1)  Free corrosion condition
自腐蚀条件
2)  etching conditions
腐蚀条件
1.
The effects of the etching conditions and doping concentration of silicon wafer on the porosity of PS film were investigated.
采用双槽电化学腐蚀法制备多孔硅,主要研究了腐蚀条件及硅基体掺杂浓度对多孔硅孔隙率的影响,并且结合原子力显微镜(AFM)、扫描电子显微镜(SEM)技术对所制备的多孔硅的表面形貌和断面形貌进行了分析表征。
2.
The optimal process of Pt electrode and the effects of etching conditions on the thickness of porous silicon were studied.
用电偶腐蚀法制备多孔硅,主要研究了铂电极的优化制备工艺以及腐蚀条件对多孔硅厚度的影响,并且结合SEM,AFM等测试手段对所制备的多孔硅的表面形貌进行了分析。
3)  anodization conditions
阳极腐蚀条件
1.
The dependence of room temperature visible photoluminescence (PL) of porous silicon (PS) and its microstructure on the anodization conditions and conductivity types and the doping level of the substrate was studied systematically.
研究了阳极腐蚀条件及单晶硅的导电类型和掺杂原子浓度等对多孔硅微结构与室温可见区光致发光性能的影响 。
4)  conditional erosion operator
条件腐蚀算子
1.
Then based on the registered image,a fast conditional erosion operator is used to adjust the border of bones and brain tissues to remove the likely symmetric region.
首先扩展适用于二值图像的自反射刚性配准算法到灰度医学图像上,然后对配准后的图像使用条件腐蚀算子调整那些近似对称区域的边界,在不同的精度下进行迭代以获得最终的非对称区域。
5)  Streaking Corrosion
条纹腐蚀
6)  line etching
线条腐蚀
补充资料:自调自净自度
【自调自净自度】
 (术语)同自调项。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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