1) additives
晶体助长剂
1.
The effects of additives(HEDP、tartaric acid,citric acid,NaH 2PO 4)and it's concentraion on the morphology of the α Fe 2O 3 prepared by aging at 100℃ from Fe(OH) 3 were studied,and were characterized by TEM、XRD and IR.
研究了晶体助长剂（ＨＥＤＰ、酒石酸、柠檬酸、ＮａＨ２ＰＯ４）及其浓度对１００℃陈化法制备的αＦｅ２Ｏ３晶形的影响，并采用ＴＥＭ、ＸＲＤ、ＩＲ光谱对产物进行了表征。
2) crystal growth from solvents
助熔剂晶体生长
3) crystal growth by flux method
助熔剂法晶体生长
4) crystal promoter
晶型助长剂
1.
Calcium sulfate whisker(CSW) which capability is better and the morphology is even and controllable was prepared by hydrothermal synthesis method using gypsum as raw material and magnesium chloride as crystal promoter respectively in this paper.
本文研究以天然生石膏为原料、氯化镁为晶型助长剂,运用水热合成法制备了性能优良,形貌均一、可控的硫酸钙晶须(CSW)产品。
5) crystal growth inhibitor
晶体生长抑制剂
1.
Extra-fine salicylic acid crystallites were prepared by using crystal growth inhibitors such as polyethylene glycol and pentaerythritol.
采用晶体生长抑制剂技术,制备了超细水杨酸晶体。
6) nucleation-agent
助晶剂
补充资料：晶体管-晶体管逻辑电路
| 晶体管-晶体管逻辑电路 transistor-transistor logic 集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。 |
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条