1) cubic boron nitride
立方氮化硼薄膜
1.
The materials known as diamond and related thin film materials include diamond films and cubic boron nitride thin films,and the method for preparing them are called the new technique of diamond.
金刚石及相关薄膜材料指的是金刚石薄膜和立方氮化硼薄膜,它们的制备技术被称为“新金刚石技术”。
2.
Studying the characteristics of the surface of the cubic boron nitride (cBN) thin films is very important to making clear its formation mechanism and application.
研究立方氮化硼薄膜表面的性质对于研究立方氮化硼薄膜的成核机理和应用,具有重要的价值。
2) cubic boron nitride thin film
立方氮化硼薄膜
1.
Controlling the interfacial structure of cubic boron nitride thin film prepared by plasma-enhanced chemical vapor deposition;
立方氮化硼薄膜生长过程中的界面控制
2.
Surface growth mechanism of cubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition;
等离子体增强化学气相沉积法制备立方氮化硼薄膜过程中的表面生长机理
4) c-BN films
立方氮化硼薄膜
1.
The characterization of c-BN films was car- ried out by XRD,FTIR spectroscopy.
同时研究了各个沉积参数(基底直流负偏压、弧光等离子体放电电流、气体流量比)对立方氮化硼薄膜制备的影响。
2.
Then the preliminary results for preparing c-BN films in Si wafer are presented, the films prepared by different assisted ion source were analyzed by infrared spectroscopy and X-ray photoelectron spectroscopy.
为选出合适的辅助离子源进行沉积制备c-BN薄膜,通过对高能和低能辅助镀膜离子源的重要性能进行比较研究之后,在单晶Si基体进行应用制备立方氮化硼薄膜,用红外光谱(FTIR)及光电子能谱(XPS)分析技术,对不同辅助离子源制备沉积的薄膜,进行比较表征,得出结论:低能辅助镀膜离子源,比高能辅助镀膜离子源更适用于制备立方氮化硼薄膜。
5) cubic boron nitride (c-BN) film
立方氮化硼(c-BN)薄膜
6) cubic BN filns growth
立方氮化硼薄膜生长
补充资料：氮化硼纤维增强体(见氮化硼纤维)
氮化硼纤维增强体(见氮化硼纤维)
boron nitride fibre reinforcements
然1‘珊升莱增强体boronments以氮化硼为主要成分，njtride fibre reinforce-用作陶瓷基、今星其有合材料增强体的一种无机纤维(见氮化硼纤维)。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条