1) RF magnetron co-sputtering
射频磁控共溅射
1.
SiO 2/TiO 2 composite thin films were prepared by RF magnetron co-sputtering.
采用射频磁控共溅射法制备了SiO2 /TiO2 复合薄膜 ,通过控制SiO2 靶与TiO2 靶的溅射时间可调节SiO2 与TiO2 的比例。
2) radio frequency magnetron co-sputtering
射频磁控共溅射法
3) magnetron co-sputtering
磁控共溅射
1.
Silicon carbide (SiC) nanocrystals embedded in silicon oxide (SiO2) matrix on Si(111) substrates were prepared by radio frequency (RF) magnetron co-sputtering using a SiO2/SiC composite target and adopting subsequent high temperature annealing.
采用二氧化硅/碳化硅复合靶,用射频磁控共溅射技术和后高温退火的方法在Si(111)衬底上制备了碳化硅纳米颗粒/二氧化硅基质(nc-SiC/SiO2)镶嵌结构薄膜材料,用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电子显微镜(SEM)和光致发光(PL)实验分析了薄膜的微结构以及光致发光特性。
2.
SiC nanocrystals embedded in SiO2 matrix on Si(111)substrates were prepared by RF magnetron co-sputtering with a SiO2/SiC composite target and subsequent high temperature annealing.
采用二氧化硅/碳化硅复合靶,用射频磁控共溅射技术和后高温退火的方法在Si(111)衬底上制备了碳化硅纳米颗粒/二氧化硅基质(nc-SiC/SiO2)镶嵌结构薄膜材料。
3.
31) thin films were prepared on c-cut sapphire substrates by magnetron co-sputtering.
采用磁控共溅射法在Al2O3(0001)基片上沉积了Zn1-xCoxO(x=0。
4) radio-frequency magnetron sputtering
射频磁控溅射
1.
Nanometer TiO_2-CeO_2 composite films on flexible polyethylene terephthalate substrate were fabricated by radio-frequency magnetron sputtering.
采用射频磁控溅射法在柔性基体聚对苯二甲酸乙二醇酯上制备了纳米TiO_2-CeO_2复合薄膜。
2.
Metal aluminum films were deposited on AAO templates by radio-frequency magnetron sputtering.
用射频磁控溅射法在阳极氧化铝模板表面制备了金属铝膜。
3.
TiB_2 coatings were prepared by radio-frequency magnetron sputtering technique on the substrates of steel and silicon.
利用射频磁控溅射技术在硅和钢片上沉积了TiB2涂层。
5) RF magnetron sputtering
射频磁控溅射
1.
Structure and stress distribution properties of ZnO thin films prepared by RF magnetron sputtering;
射频磁控溅射ZnO薄膜的结构和应力特性
2.
Preparation of boron carbon nitride thin films by RF magnetron sputtering;
射频磁控溅射制备硼碳氮薄膜
3.
RF magnetron sputtering of GaP thin film and computer simulation of its depositing process;
GaP薄膜的射频磁控溅射沉积及其计算机模拟
6) RF-magnetron sputtering
射频磁控溅射
1.
Comparisons between ZnO thin films fabricated by RF-magnetron sputtering and Electron-beam evaporation
射频磁控溅射和电子束蒸发制备ZnO薄膜特性的比较
2.
Multi-groups of SiC thin-films samples were prepared by RF-magnetron sputtering.
采用射频磁控溅射法制备了多组SiC薄膜样品。
3.
Methods:The nature HA films were prepared by electron beam evaporation and rf-magnetron sputtering techniques.
方法:用电子束蒸发和射频磁控溅射两种技术制备了天然HA薄膜。
补充资料：磁控溅射
分子式：
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条