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1)  CdSe CdS
CdSe-CdS
2)  CdS-CdSe polycrystallite film
CdS-CdSe多晶薄膜
3)  CdSe nanocrystals
CdSe纳米晶
1.
Electroluminescence of CdSe Nanocrystals Synthesized by Aqueous Solution;
水溶性CdSe纳米晶的电致发光研究
2.
With trioctylphosphine and oleic acid as the ligands of Se and Cd,high-quality CdSe nanocrystals with controlled particle size were synthesized in a 260~300 ℃ noncoordinating solvent octadecene under argon flow.
在氩气保护下,用三辛基亚磷酸和油酸分别作为Se和Cd的配位体,在260~300℃的十八烯溶液中合成了尺寸可控的CdSe纳米晶。
3.
The results of XPS confirmed the formation of CdSe nanocrystals,and the images of TEM demonstrated that the average size of CdSe nanocrystals was less than 10 nm and the aggregation occurred among the nanocrystals.
以巯基乙酸为稳定剂,在水相中制备了CdSe纳米晶水溶胶,并用X射线光电子能谱和透射电子显微镜对其进行了表征,证明了CdSe纳米晶的形成。
4)  CdSe nanorods
CdSe纳米棒
1.
Preparation and photoelectrochemical study of CdSe nanorods;
CdSe纳米棒的制备及光电性能研究
2.
Photoelectrochemical properties of ZnO nanocomplex/CdSe nanorods composite film
ZnO纳米团簇与CdSe纳米棒复合膜的光电化学性能研究
3.
CdSe nanorods with different structure phases were prepared by a hydrothermal method, and the products were characterized with TEM, SEM, XRD, TGA-DTA.
采用水热法制备了不同晶型CdSe纳米棒,并用TEM、SEM、XRD、TGA-DTA对其进行了表征。
5)  CdSe single crystals
CdSe单晶体
1.
The experimental results indicated that the CdSe single crystals grown in our laboratory are always n-type compound semiconductor with a hexagonal system and the band gap about 1.
通过变温(20~300K)霍尔效应测量,研究了CdSe单晶体的电阻率ρ(T)、载流子浓度n(T)、霍尔系数RH(T)和霍尔迁移率μH(T)的温度依赖关系。
2.
Growth of CdSe Single Crystals and Room Temperature Nuclear Radiation Detectors;
CdSe单晶体是最有前途的室温核辐射探测器材料之一,但由于没有制备出高质量的CdSe单晶体,加上没有成熟的半导体材料加工技术与器件制作工艺,人们对CdSe探测器没有进行深入的研究。
6)  CdSe single crystal
CdSe单晶体
1.
High quality CdSe single crystals with excess Cd(10mm in diameter and 45mm in length) were grown using modified sublimation technique,i.
本文报道了用改进的垂直气相法 (多级提纯垂直气相法 )生长富Cd的CdSe单晶体 ,并对晶体的性能进行了观测 ,其电阻率为 10 7Ωcm量级 ,电子陷阱浓度为 10 8cm- 3量级 ,第一次报道了 (110 )面的腐蚀形貌。
补充资料:cadmium selenide CdSe
分子式:
CAS号:

性质:白色到棕色结晶体,立方或六方晶结构。密度5.81g/cm3。熔点1350℃。在空气或酸中分解,几乎不溶于水,剧毒,遇高温、明火或酸接触放出硒化氢气体。制取方法:高温下硒和镉直接反应;硒化氢和镉盐溶液作用;氧化镉和硒和草酸或草酸溶液作用。用于颜料、陶瓷、油漆和发光材料,用于制作光电材料、电子发射器和光谱分析、太阳能电池、激光器等。

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