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1) depth profile analysis
深度剖面分析
1.
A Si/Mo noncrystalline multilayer film sample was cut into two equal pieces in surface area for two times SIMS depth profile analysis by using RAS POINT MODE and POINT MODE respectively.
:用对比方式对分割成二等分的同一Si/Mo多层非晶薄膜样品分别作了RAS POINTMODE和POINTMODE的二次离子质谱深度剖面分析 ,前者是把RASMODE(扫描法 )与POINTMODE(定点法 )有效结合起来的一种方法 ,即所谓扫描 -定点法。
2.
Key words Golw discharge, Optical Emission Spectrometry, Bulk Analysis,Depth profile Analysisd good adaptability and can.
本文主要介绍了辉光放电光谱仪的分析原理、分析特点以及在钢铁分析中的两个主要应用 :基板分析和深度剖面分析。
2) depth profile analysis of AES
AES深度剖面分析
3) Depth profiles
深度剖面分布
4) depth profile
深度剖析
1.
The application of ￣(16)O(α,α)￣(16)O sharp resonance in calibration and oxygen depth profile;
~（16）O（α，α）~（16）O锐共振在加速器能量快速校刻及氧元素深度剖析中的应用
2.
In this paper,the surface components of a filmed galss are measured and the film structure of the glass is analyzed by AES depth profile,and the depth of the film is estimated by an indirect way.
利用俄歇电子能谱仪测试了一种镀膜玻璃的表面层成分 ,并利用深度剖析的方法测试分析了其镀膜层的结构 ,估算了镀膜层的厚度。
3.
The ZnO thin films being grown on Si(111)by O+-assisted pulsed laser deposition(PLD)method were carried out with the ex situ test by using X-ray photoelectron spectroscopy(XPS)depth profile measurements.
对于在Si(111)上用氧离子束辅助(O+-assisted)脉冲激光淀积(PLD)生长的ZnO薄膜,用X射线光电子能谱(XPS)深度剖析方法对长成的样品进行了异位测试,分析了导致各峰峰位能移的因素;通过异位与原位XPS谱图的比较,指出O+-assistedPLD法生成的ZnO薄膜中存在孔隙;指出生长出的ZnO薄膜中含Si成分的厚度不超过18nm;同时探讨了在长成的ZnO/Si上继续生长GaN薄膜的可行性。
5) Depth analysis
深度剖析
1.
Depth analysis of confocal Raman micro-spectroscopy was applied to chirography identification.
利用共焦显微拉曼光谱纵向扫描采样手段,发展了一种深度剖析光谱方法在法庭科学领域的新应用,并将此方法具体运用到了书写笔迹与印章印泥的鉴定,在纵向上区分笔迹和印泥的空间位置上取得了很好效果。
2.
A depth analysis spectra method for researching fluorescent and Raman spectra was developed since a self absorption was often observed in fluorescent spectra of thick solid sample.
利用共焦显微镜纵向扫描采样手段 ,发展了一种空间分辨 (深度剖析 )光谱方法进行荧光光谱和拉曼光谱的甄别以及它们相应跃迁的指认 。
6) Depth profiling
深度剖析
1.
In analysis of semiconductor and other thin film materials depth profiling is the most important SIMS application.
深度剖析是二次离子质谱在半导体以及各种其它薄膜材料分析中最重要的应用 ,深度分辨本领是表征其分析能力的重要参数 ,国际标准化组织 ( ISO)最近正在研究和制定这方面的国际标准。
2.
Depth profiling was conducted using MCs+-SIMS technique after the samples were annealed at 870℃ for different time in high vacuum.
经870℃下不同真空退火时间处理后，运用MCs＋－SIMS技术进行了深度剖析，并结合XRD物相分析，对Mo／A2O3界面问题进行了探讨。
补充资料：关于solidworks 中的剖面线中的剖面线
solidworks的剖面线线型定义和autocad相同,它使用了autocad的剖面线定义方法,与autocad通用.因此,可以对剖面线进行定义. 方法:修改\SolidWorks\lang\chinese-simplified\sldwks.prn 用笔记本打开该文件,添加需要的线形.如 ;; Based on AutoCAD Ver.13.0s Hatch Pattern File ;;;; solidworks 区域剖面线定义文件 :: *金属, (Iron BrickStone), ANSI Iron, Brick, Stone masonry 45, 0,0, 0,.125 *塑料, (Lead Zinc Mg), ANSI Lead, Zinc, Magnesium, Sound/Heat/Elec Insulation 45, 0,0, 0,.125 135, 0,0, 0,.125 *玻璃,AR-GLASS@1.0 45,0,0,0,0.5, 0.5,-0.5 45,0,0.1414214, 0,0.5, 0.3,-0.7 45,0.1414214,0, 0,0.5, 0.3,-0.7 *软木, Cork material@1.0 0, 0,0, 0,.125 135, .0625,-.0625, 0,.35355339, .176776696,-.176776696 135, .09375,-.0625, 0,.35355339, .176776696,-.176776696 135, .125,-.0625, 0,.35355339, .176776696,-.176776696 *无, None 删除不需要的定义类型,可以大大提高solidworks 的启动速度
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条
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