1) photo-ionization cross section
光激发截面
1.
The measurement on photo-ionization cross section of pure Bi_(12)SiO_(20) crystal;
纯Bi_(12)SiO_(20)晶体光激发截面的测量
3) photostimulation cross section
光激励截面
1.
f the density ratios and photostimulation cross section ratio of the two kinds of F color centers on irradiation wavelength and stimulation readout temperature during,the PSL of BaFCl: Eu2+ phosphors are given.
通过改变激励方式及激励光的扫描方向，给出了ＢａＦＣｌ∶Ｅｕ（２＋）光激励发光过程中，两种Ｆ色心的浓度比值和光激励截面比值与紫外线辐照波长和测定温度的关系。
4) broad-area diode laser
宽发光截面半导体激光器
1.
The beam quality and far-field beam profile of broad-area diode laser (BAL) are investigated.
通过对宽发光截面半导体激光器(BAL)输出激光空间特性和远场分布的理论分析,并根据激光振荡的自再现原理,导出了反馈注入外腔宽发光截面半导体激光器输出激光的光场分布。
5) stimulated-emission cross-section
受激发射截面
1.
The calculation of stimulated-emission cross-section and the testing of fluorescence lifetime of Nd∶GGG crystal;
Nd∶GGG晶体荧光寿命的测试及受激发射截面的计算
2.
The integrated absorption cross-sections at 810 nm and the stimulated-emission cross-sections at 1.
06μm处的受激发射截面都是最大的。
6) Stimulated emission cross section
受激发射截面
1.
Techniques for measuring the polarized absorption spectrum,polarized stimulated emission cross section and fluorescent lifetime of Nd:YAP crystal are fully discussed.
从分析Nd:YAP和Nd:YAG两种激光晶体的优缺点入手,指出前者的各向异性能够提供许多特殊的用途,讨论了它的能级和光谱特性,详细介绍了该晶体偏振吸收谱、偏振受激发射截面谱和荧光寿命的测量方法,并给出了两块沿a轴切割的Nd:YAP晶体的测量结果和分析。
2.
The description about the effective stimulated emission cross section of R_2→Y_3 transition of Nd∶YAG crystal in the book "Solid-State Laser Emgineering"written by W.
Koechner先生所著的《Solid-StateLaserEngineering》一书中关于Nd∶YAG晶体R2→Y3跃迁有效受激发射截面的描述进行讨论。
3.
By using the experimentally measured threshold data and slope efficiency, the stimulated emission cross section of Nd∶GdVO 4 crystal was determined to be 1.
利用实验测得的阈值抽运功率和斜率效率 ,计算了Nd∶GdVO4晶体在 1 34μm波长处的受激发射截
补充资料：晶体中的元激发(见固体中的元激发)
晶体中的元激发(见固体中的元激发)
elementary excitation in crystal
晶体中的元激发eleme讯ary excitation Incrvstal见固体中的元激发。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条