1) Defect concentration
缺陷浓度
1.
The paper has proved that when the defect production velocity and the temperature of the thermostat, the controllable parameters,are in some range, there are the defect concentration and temperature oscillate periodically with time-the time dissipative str.
采用线性化处理、拓扑映射及数值计算相结合的方法，求解了离子辐照下各向同性晶体薄片中缺陷浓度和温度满足的非线性微分方程组，证明了当可控参量，即缺陷产生速度和恒温箱温度处于某些范围时。
2.
The results of positron annihilation spectra showed that defect concentration was different in all the DLC films.
对在不同极板负偏压下采用射频-直流等离子体方法制备得到的类金刚石膜(a-C:H)的微结构进行了测量,利用慢正电子束实验装置,探测并分析了样品缺陷浓度的分布情况。
2) concentration of point defects
点缺陷浓度
3) trap concentration
陷阱浓度
1.
The trap concentration and tunnel conductance in aluminum anode oxidized films under high field.;
高压铝阳极氧化膜的陷阱浓度与隧穿导电
4) density of A vacancy
A缺位浓度
1.
The density of A vacancy [VA] depends on how A site and B site displaced by M3+.
A缺位浓度[VA]取决于M3+的A位或B位取代情况，M3+只取代A位[（Sr,Ca）1-xMx（VA）x/2]TiO3,或M3+只取代B位[（Sr,Ca）1-x/2（VA）x/2]（Ti1-xMx）O3,产生A缺位浓度[VA]较大，对其瓷料介电性能影响较明显；M3+同时取代A和B位[（Sr,Ca）]1-x1Mx1]（Ti1-x2Mx2）O3，由于电价补偿，产生A缺位浓度[VA]较小，因而对其瓷料介电性能影响较小。
5) defect depth
缺陷深度
1.
Measurement of defect depth by infrared thermal wave nondestructive evaluation based on pulsed phase;
基于脉冲位相的红外热波无损检测法测量缺陷深度
6) defect length
缺陷长度
1.
To modify NSC,a new formula of ultimate bending moment with consideration of defect length was established.
评定含缺陷管抗弯曲特性的NSC方法(net-section collapse criterion),所给出的极限弯矩与缺陷长度无关,与实际不符。
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条