Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors,a high L-band medium silicon pulse power transistor has been developed.

A new base-combed structure of RF power transistor is proposed,which can markedly improve the heat-radiating property of RF power transistors,increase the dissipation power and out-put power,and alleviate the contradiction of high operation frequency and large out-put power in the RF power transistors with traditional structures.

In this article,heat-emanating analysis and calculation for two high-power transistors of one intermediate frequency inverter electrical source were done by thermal design theory and empirical formul.

A burn-in screening method that can be performed unconditionally on the test bed or performed on the power tubes that has been installed in system but has some latent flaws.

Soc power management and application in TD-SCDMA terminal base-band IC design;

Power Management in WDM Optical Networks;

Then several power management strategies of battery are put forward and their advantages and disadvantages are analyzed according .

Some problems are discussed with the proposed circuit,such as the floating gate drive for the power MOSFET,the dead time setup of the complementary PWM outputs,the reasons to form the oscillation and the way to opti.

Anti-Jamming Technology of IR2110 on Driving IGBT;

Analysis is made on switching properties and drive mechanism for MOS power transistor based on classical circuit theory.