1) Large Absolute Band Gap
大带隙
1.
Rectangle Lattice Photonic Crystal with Large Absolute Band Gap at Low Frequency;
在低频区具有大带隙的长方晶格二维光子晶体
2) maximum absolute bandgap
最大绝对带隙
1.
We reveal that a maximum absolute bandgap for this structure is achieved for an intermediate rotation angle of the holes.
对洞的中等旋转角 ,我们揭示此结构的最大绝对带隙可以获得 ,且该角依赖于洞的半径和背景材料的折射指数。
3) band gap
带隙
1.
Effect of translation group symmetry on phononic band gaps studied by supercell calculation;
超元胞方法研究平移群对称性对声子带隙的影响
2.
Influence of scatterers′ tropism on the band gaps of two-dimension phononic crystal;
散射体的取向对二维声子晶体带隙的影响(英文)
3.
Elastic wave band gap and scattering in phononic crystal;
声子晶体中弹性波带隙与散射
4) bandgap
['bændɡæp]
带隙
1.
Precise Bandgap Voltage Reference and Current Reference;
一种高精度的带隙基准电压源及电流源
2.
Design of low temperature drift bandgap voltage reference and driving circuit;
低温漂带隙基准源及驱动电路设计
3.
A method to estimate the strain state of SiGe/Si by measuring the bandgap;
带隙法测定SiGe/Si材料的应变状态
5) Band-gap
带隙
1.
It is concluded that compared with simple lattices, the band-gap of complex lattices.
结果表明,与简单格子相比,复式格子的带隙出现在频率相对较低的位置;在f=0·091—0·6046范围内,将声子晶体排列为复式格子要优于简单格子,可以得到更宽带隙。
2.
First principles and pseudopotential approaches have been used to investigate band structures and pressure dependence of the band-gaps of ordered zincblende Ge_(50)Sn_(50)alloy up to 9 GPa.
使用第一性原理和赝势方法研究了Ge_(50)Sn_(50)有序合金直到9 GPa压力下的能带结构和带隙的压力依赖性。
3.
In this paper, on basis of the analysis of the foregoing band-gap voltage reference ,a self-start low-voltage low-power band-gap voltage reference is proposed in which TSMC 0.
35μm CMOS工艺,基于对传统带隙基准电路的分析,利用MOS管的亚阈特性,设计了一种低压低功耗的带自举的带隙基准电压源。
6) fracture zone
隙带
1.
Research and application of the technique of stopping the drainage hole quickly by chemical method in the structure fracture zone;
应用化学法在构造裂隙带快速封堵抽放钻孔技术的研究与应用
补充资料：大带
1.古代贵族礼服用带﹐有革带﹑大带之分。革带以系佩韨﹐大带加于革带之上﹐用素或练制成。 2.指玉带。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条