To achieve high optical power as well as low vertical divergence angle,a new kind of optim ized large opti- cal cavity (L OC) structure is applied to a ridge waveguide 980 nm In Ga As/ Ga As/ Al Ga As m ulti- quantum well laser.

It is found that optimization of the structure parameters of ridge waveguide (RWG) can decrease the threshold current of RWG laser diode.

5 μm InGaAsP integrated device was fabricated by using the ridge waveguide.

The lifetime of free carriers in a silicon-on-insulator(SOI) rib waveguide,which is used for Raman amplification,is studied in connection with the nonlinear optical loss.

The coupling efficiency between a rib waveguide based silicononinsulator(SOI) and a singlemode fiber(SMF) was improved by using an optimally designed mode transformer.

Based on the comparison between two different single mode conditions for rib waveguides with large cross section,the conditions given by Pogossian et al and its errors are analysed.

High-power ridge-waveguide tapered InGaAs-AlGaAs lasers emitting at 980nm were fabricated.

By etching a second-order grating directly into the Al-free optical waveguide region of a ridge-waveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode.

Further computation indicates that the ferrite slabs loaded ridged waveguide has broadband frequency properties and the grooved waveguide has greater differential phase shift.

The structure of the polymer rib optical waveguide is designed by using effective index method(EIM),and the mode field distribution in these waveguides is analyzed to determine the suitable structural size range.

This paper present a method to analysis arbitrarily shaped rib waveguide.

Comparsions of single mode waveguide conditions for single mode silicon on insulator (SOI) and GeSi/Si rib waveguides obtained by the effective index method (EIM) and proposed by Soref et al.