In order to solve the problem of cutoff frequency of rectangular ridged waveguide,effects of trains on cutoff frequency in rectangular tunnel are analyzed by using ridged waveguides method.

This paper describes the application of finite element method for obtaining the TE mode′s cutoff wavelength and the field pattern of symmetric quadruple-ridged rectangle waveguide.

Further computation indicates that the ferrite slabs loaded ridged waveguide has broadband frequency properties and the grooved waveguide has greater differential phase shift.

To achieve high optical power as well as low vertical divergence angle,a new kind of optim ized large opti- cal cavity (L OC) structure is applied to a ridge waveguide 980 nm In Ga As/ Ga As/ Al Ga As m ulti- quantum well laser.

It is found that optimization of the structure parameters of ridge waveguide (RWG) can decrease the threshold current of RWG laser diode.

5 μm InGaAsP integrated device was fabricated by using the ridge waveguide.

High-power ridge-waveguide tapered InGaAs-AlGaAs lasers emitting at 980nm were fabricated.

By etching a second-order grating directly into the Al-free optical waveguide region of a ridge-waveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode.