1) CMP
化学-机械抛光
1.
Electrochemical Behavior of Copper in HNO_3 Aqueous Solution Containing BTA during CMP;
铜在硝酸介质苯并三唑抛光液中化学-机械抛光时的电化学行为
2) chemical-mechanical polishing machine
化学机械抛光机
3) chemical mechanical polishing
化学机械抛光(CMP)
4) chemical mechanical polishing(CMP)
化学机械抛光(CMP)
5) chemical mechanical polishing(CMP)
化学机械抛光
1.
Presents a sequence of order-of-magnitude calculations based on the concepts of chemical kinetics and transport phenomena during the chemical mechanical polishing(CMP) process.
考虑抛光液/芯片的相界面氧化剂浓度和芯片氧化薄膜缺陷对材料去除机理的影响,提出化学机械抛光(CMP)中材料去除机理的量级估算方法,应用化学动力学及传质学等理论估算氧化薄膜的扩散深度量级和生成速率,采用纳米压痕仪模拟单个磨粒在芯片表面的压痕作用,应用线性回归方法分析载荷70 nN下,磨粒压入芯片的深度量级为10-11m。
2.
Slurry flow weighs heavily on the performances of chemical mechanical polishing(CMP) process,wherein the pad surface will alter the flow features considerably.
抛光垫表面特性能可大大改变抛光液的流动情况,从而影响化学机械抛光的抛光性能。
3.
For high-quality and high-efficiency chemical mechanical polishing(CMP) of multilayer interconnection in ultralarge-scale integrated(ULSI) circuit,the silica sol nano-abrasive with large-particle and lowpolydispersition was prepared by polymerization growth technique with control of constant liquid level.
为满足甚大规模集成电路(ULSI)互连结构高质量、高效率化学机械抛光(CMP)的要求,以LaMer模型为理论指导,对恒液面聚合生长法制备大粒径、低分散度硅溶胶研磨料的粒径增长阶段进行了机理分析,并讨论了加料速率对平均粒径及分散度的影响;优化加料速率为3。
6) ECMP
电化学机械抛光
1.
Advanced Process Control Extends ECMP Process Consistency;
先进的工艺流程控制拓展电化学机械抛光工艺相容性(英文)
2.
A new electrochemical mechanical polishing(ECMP) procedure was presented.
介绍了一种使用螺旋式线型工具电极的电化学机械抛光新工艺。
补充资料：抛光剂,抛光混合剂
CAS：68909-13-7
中文名称：焙烧提浓的氟碳铈镧矿；抛光剂,抛光混合剂
英文名称：Bastnaesite, calcined concentrate；Calcined bastnasite；bastnaesite, calcined conc.；polishing compound；Bastnaesite,calcined concentrate
中文名称：焙烧提浓的氟碳铈镧矿；抛光剂,抛光混合剂
英文名称：Bastnaesite, calcined concentrate；Calcined bastnasite；bastnaesite, calcined conc.；polishing compound；Bastnaesite,calcined concentrate
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条