1) pseudofull-band-gaps
准完全带隙
1.
It is shown that the artificial opals belong to analogue fee type packing of SiQ2 spheres as indicated by microscope morphology observation and transmission measurements and the artificial opals are pseudofull-band-gaps silica photonic crystals.
分析表明,二氧化硅球排布为类面心立方结构;其带隙为准完全带隙。
3) complete photonic band gap
完全光子带隙
1.
Study of complete photonic band gap in two-dimensional chessboard of non-Bravais lattice;
二维棋盘格子复式晶格的完全光子带隙研究
4) the complete two-dimensional band gap
二维完全光子带隙
5) Bandgap reference
带隙基准
1.
CMOS bandgap reference voltage source with high PSRR;
一种高电源抑制比的CMOS带隙基准电压源
2.
Design of a low-voltage CMOS bandgap reference circuit based on the body-driven technique;
基于体驱动技术的低压CMOS带隙基准电路设计
3.
A resistorless CMOS bandgap reference with below 1 V output;
输出电压低于1 V的无电阻CMOS带隙基准电压源(英文)
6) bandgap voltage reference
带隙基准
1.
This paper introduce a high precision bandgap voltage reference with a piecewise-linear-compensating circuit which is an easily extended structure.
将该电路应用于一款Boost升压芯片的带隙基准源中,在-40~120℃的温度区间分三个子区间进行线性补偿,采用JAZZBCD05 2P3M BiCMOS工艺实现,仿真结果表明,在整个温度范围,温漂可达到5。
2.
This paper proposes a novel high precision CMOS bandgap voltage reference which with a soft-start up circuit.
提出了一种新颖的带有软启动的高精密CMOS带隙基准电压源。
3.
A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.
提出了一种采用分段线性补偿的方法来实现高精度带隙基准 ,其基本原理是将整个温度区间分为若干个子区间 ,在不同子区间上采用不同线性补偿函数达到最佳补偿 。
补充资料：间接带隙(见半导体的能带结构)
间接带隙(见半导体的能带结构)
indirect band gap
I’ed接带隙indireet band gap见半导体的能带结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条