1) polycrystalline GaP
GaP多晶
1.
The basic reactions and transport velocity of polycrystalline GaP grown by CVT (chemical vapor transport) method were explained.
阐述了CVT(化学气相输运)法生长GaP的基本反应和输运速度,采用CVT法生长出了GaP多晶。
2) GaP nanocrystals
GaP纳米晶
1.
Synthesis of GaP nanocrystals by elemental reactions under solvothermal conditions;
溶剂热条件下单质直接反应合成GaP纳米晶
2.
GaP nanocrystals were synthesized by high temperature high pressure beuzene ther-inal synthesis method, the samples were charartrized by X-ray cliffraction,optical absorption and transmission election microscope.
用高温高压苯热合成方法制备了GaP纳米晶，用X射线衍射、光吸收谱及透射电子显微镜对所得样品进行了分析测试。
3) GaP crystal
GaP晶体
1.
The physical mechanism of terahertz generated from GaP crystal is discussed based on polariton theory.
基于耦合场量子的角度研究GaP晶体辐射太赫兹波的物理机制,报道了一种分析非线性光学晶体产生太赫兹波的方法。
4) AlP/GaP Superlattice
AlP/GaP超晶格
5) polycrystalline
[,pɔli'kristəlain]
多晶
1.
Purification and stoichiometric concentration control of ZnSe polycrystalline by zone sublimation method;
ZnSe多晶料的提纯与化学比的控制
2.
Research on preparation and structure of porous B-doped polycrystalline diamond;
多孔含硼金刚石多晶体的制备与结构研究
3.
Growth and Characterization of Polycrystalline HgI_2 Films on Amorphous-Si Film Substrate;
非晶硅薄膜上碘化汞多晶薄膜的生长及其性能
6) Polycrystal
[,pɔli'kristəl]
多晶
1.
Study of Preparation of Polycrystalline Material of La_(0.5)Sr_(0.5)CoO_3;
La_(0.5)Sr_(0.5)CoO_3多晶靶材制备工艺的研究
2.
Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation;
采用金属镓层氮化技术在石英衬底上生长多晶GaN
补充资料：多晶莫来石晶须(纤维)
分子式：
CAS号：
性质：莫来石相为主晶相的多晶纤维。化学成分为Al2O3 72％～77％，SiO222％～17％，B2O3 3％～5％，P2O51.5％～3.0％。纤维直径2～7μm，纤维长度20～125μm。使用温度1350℃。多采用溶胶-凝胶法制造。主要用作补强填料，也可作为轻质、隔热保温材料使用。
CAS号：
性质：莫来石相为主晶相的多晶纤维。化学成分为Al2O3 72％～77％，SiO222％～17％，B2O3 3％～5％，P2O51.5％～3.0％。纤维直径2～7μm，纤维长度20～125μm。使用温度1350℃。多采用溶胶-凝胶法制造。主要用作补强填料，也可作为轻质、隔热保温材料使用。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条