1) Single-electron-trapped oxygen vacancy
氧空位(VO)
2) Oxygen vacancy
氧空位
1.
The theoretical research on the bond type switch in undoped and c-doped anatase with oxygen vacancy;
锐钛矿氧空位与氧空位和碳掺杂两种模型键型转化的理论研究
2.
It also analyzes and views the future of introducing oxygen vacancy.
从染料敏化、半导体复合、金属离子和非金属离子掺杂等方面介绍了目前的研究现状,并对引入氧空位缺陷来改善其可见光催化活性进行了分析和展望。
3.
The electronic structures,dielectric functions and absorption spectra for the CaMoO4(CMO) crystal with and without oxygen vacancy VO2+ have been calculated using the CASTEP code with the lattice structure optimized.
用CASTEP软件包对含氧空位的CaMoO4(CMO)晶体进行了结构优化,计算了含氧空位的CaMoO4(CMO)晶体和完整CMO晶体偏振光的电子结构、介电函数和吸收光谱。
3) oxygen vacancies
氧空位
1.
In contrast to the sample annealed in air,more oxygen vacancies and/or defects exist in the sample annealed in vacuum.
真空中烧结的样品存在更多的氧空位或结构缺陷。
2.
It is believed that the dielectric anomaly is caused by defect dipoles related to oxygen vacancies.
分析认为70℃的介电和损耗峰与氧空位形成的缺陷偶极子的极化弛豫有关。
3.
The effect of AC measuring signal level on the dielectric properties of SrTiO3 thin films was investigated and the variation rule of the dielectric properties of SrTiO3 thin films with different concentration of oxygen vacancies according to AC measuring signal level was studied.
研究了交流测试信号振幅对SrTiO3薄膜介电性质的影响,并比较研究了不同氧空位浓度的SrTiO3薄膜介电性质随测试信号振幅的变化规律。
4) O-V complexes
氧-空位对
5) high concentration of oxygen vacancies
高氧空位
1.
First principle study on the electron life span of degenerate anatase phase TiO_2 semi-conductor with high concentration of oxygen vacancies;
高氧空位简并锐钛矿TiO_2半导体电子寿命的第一性原理研究
6) oxygen vacancy V_o
氧空位V_o
补充资料：(beta-4)-vanadate (vo43-tripotassium
CAS：14293-78-8
分子式：K3VO4
中文名称：钒酸三钾
英文名称：tripotassium, (T-4)-Vanadate；Potassium vanadate (ortho)；(beta-4)-vanadate (vo43-tripotassium；Vanadate,tripotassium,(T-4)-；Potassium vanadate(ortho)
分子式：K3VO4
中文名称：钒酸三钾
英文名称：tripotassium, (T-4)-Vanadate；Potassium vanadate (ortho)；(beta-4)-vanadate (vo43-tripotassium；Vanadate,tripotassium,(T-4)-；Potassium vanadate(ortho)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条