1) interface migration
界面迁移
1.
The interface migration phenomenon of “embeded” Cu/Ni diffusion couples was investigated with color metallography technique during vacuum diffusion process,and the diffusion behavior on the Cu/Ni interface was studied.
采用彩色金相技术对“嵌入式”Cu/Ni扩散偶真空扩散处理时的界面迁移现象进行了观测,并研究了Cu/Ni界面间的扩散行为。
2.
With the help of optical microscope(OM) and color metallograph,interface migration and its influencing factors were investigated during sintering.
研究表明,界面迁移过程受原子的扩散控制;温度是影响界面迁移的主要因素,保温时间是次要因素;试样烧结过程中Cu/Al界面双向迁移并且向Al侧迁移的程度较大。
3.
After analyzing the pressure characteristics, the velocity distribution, the interface migration and the outlet bending angle of the two melts in the bicomponent spinning, the article got a basic principle about the shaping of “islands” and its distribution in the cross section of the Sea-island fiber.
文章通过分析双组分复合纤维纺丝时两相熔体的压力特征、速度分布、界面迁移和出口弯角等熔体特征,对海岛纤维岛相成型及其在纤维横截面上分布的基本规律进行了探讨。
2) γ/a interface migration
γ/a界面迁移
3) solid/liquid interface shift
固液界面迁移
1.
Based on the solid/liquid interface shift theory and the SODCM (the second-order opposite diffusion compensation method) model, the vertical Bridgman growth of Hg_(1-x)Mn_xTe with variational withdrawal rate was studied and its feasibility was validated through theoretical analysis and experimental results.
在固液界面迁移理论和SODCM模型(二次反扩散补偿法)的基础上,本文提出采用垂直Bridgman法变速生长Hg1-xMnxTe晶体,并从理论和实验两方面对该方法的可行性进行了验证。
4) grain boundary migration
晶界迁移
1.
The results showed that a compressive strain parallel to the grain boundary enhanced the grain boundary migration,which is driven by the interaction between neighboring grain boundaries.
结果表明:平行于晶界方向的压应变可以促进晶界在相邻晶界交互作用下发生迁移;垂直于晶界方向的压应变则不能对晶界迁移产生明显的效果。
2.
The fine phase of Mg_(12)Ce can apparently elevate recrystallization temperature by means of preventing the grain boundary migration,and improve the room and elevate temperature properties.
对Mg-Ce-Zn-Zr合金的显微组织进行了观察研究,通过XRD分析、光学显微(OM)分析、扫描电子显微镜(SEM)分析表明:Mg12Ce及Mg17Ce2相铸态时主要存在于晶界,存在于晶界的稀士相Mg12Ce能显著提高合金的再结晶温度,阻碍晶界迁移。
3.
The grain boundary migration during recrystallization in IC 218 alloy was studied by means of TEM and ODF.
采用 TEM和 ODF(取向分布函数 )等手段对 IC- 2 18合金再结晶过程中的晶界迁移行为进行了研究 ,发现小角晶界的活动相当活跃 ,而一般大角晶界失去了明显可动性。
5) three-phase surface polymerization by phase shifts
三相迁移界面聚合
补充资料：[1,j]-σ-迁移
分子式：
CAS号：
性质：这是一种迁移基团不发生重排的σ-迁移反应。1是指迁移反应发生前，与迁移的σ键保持键合的原子或原子团在共轭链中的位置；j则指发生σ迁移反应后，σ键迁移到共轭链的第j个原子上。例如[1,3]-σ迁移，[1,5]-σ迁移等。[1,j]-σ-迁移反应可以是同面迁移，也可以是异面迁移；而且迁移基团的构型在迁移过程中可以保持，也可以翻转。
CAS号：
性质：这是一种迁移基团不发生重排的σ-迁移反应。1是指迁移反应发生前，与迁移的σ键保持键合的原子或原子团在共轭链中的位置；j则指发生σ迁移反应后，σ键迁移到共轭链的第j个原子上。例如[1,3]-σ迁移，[1,5]-σ迁移等。[1,j]-σ-迁移反应可以是同面迁移，也可以是异面迁移；而且迁移基团的构型在迁移过程中可以保持，也可以翻转。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条