1) membrane stress
薄膜应力
1.
According to the theory of force-free moment and by means of the sectional method of Materials Mechanics, this paper gives an analysis of and a solution to the meridional membrane stress of gyro shell in three cases.
根据无力矩理论采用材料力学的截面法对三个实例中回转薄壁壳体的经向薄膜应力作了分析和求解,并用弹性理论的计算结果进行了验证,从而说明回转薄壳薄膜应力材料力学解答的准确性。
2.
The deformation curve of inflated airbag fabric and the membrane stress distribution were computed using the finite element method to simulate the process of airbag inflation under different pressures ranging from 0 to 50 kPa.
对气囊织物承受0～50kPa的气流充胀过程进行了有限元模拟,得到了其充胀后的变形曲线及其薄膜应力分布,并通过实测中心挠度验证了数值模拟的有效性。
2) thin film stress
薄膜应力
1.
The measurement of thin film stress is always a problem with great difficulty.
薄膜应力的测量一直是一个困难的问题。
2.
According to the principle of substrate curvature method,an apparatus had been designed and refitted to measure the curvature radius of amorphous RGMF sample,then the thin film stress was calculated.
利用基片曲率法原理,设计改装了一套基片曲率显微观测装置用于测量稀土超磁致伸缩合金非晶RGMF薄膜试样的曲率半径并计算薄膜应力;分析探讨了使用该装置测量计算曲率半径的随机误差与系统误差,并在此基础上进一步分析了薄膜应力的相对误差。
3.
In order to meet the requirements of optical, electronic and mechanical performance of semiconductor products, it is necessary to measure thin film stress during the deposition.
为使半导体产品达到所要求的光学、电子和机械性能,必须实时地在沉积过程中直接测量薄膜应力。
3) film stress
薄膜应力
1.
Stoney formula and the corresponding approximate deducing with substrate curvature method are adopted to evaluate the film stress in several processes.
针对压印光刻工艺实现图章保真复型对阻蚀胶薄膜的均匀度和应力分布的要求,对匀胶过程中的时间、转速和加速度等参数进行了分析,并采用基片曲率法的Stoney公式及其近似计算公式,对不同参数环境下的薄膜应力及应力梯度分布作了计算分析。
2.
This paper first analyses the nature and features of the edge stress, and its differeces from and its relationswith the film stress, then points out the relationship between the edge stress and the strength of pressure vessel, andputs forward several detailed measures to treat the eege stress, and therefore solves the important problem in the ves-sel design.
分析边缘应力的性质,特点及其与薄膜应力的区别联系,指出边缘应力与压力容器强度的关系,提出了容器设计中处理边缘应力的几种方法和具体措施。
3.
The experimental results show that the film stress tu rns from compressive to tensile with the increase of Ar gas pressure, and the magnetic anisotropy has a close relationship with the depositi on conditions.
研究了溅射条件对薄膜应力、磁滞回线及巨磁阻抗效应的影响。
4) Membrance stress
薄膜应力
1.
Explorations on the solution to membrance stress of full liquid vessel;
充液容器薄膜应力解法的探讨
5) membrane shear stress
薄膜剪应力
6) relaxing of intrinsic stress of film
薄膜应力缓解
补充资料：轧辊残余应力(见轧辊应力)
轧辊残余应力(见轧辊应力)
residual stresses in roll
zhagun eanyu yingli轧辊残余应力(residual stresses in roll)见礼辐应力。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条