1) CdTe thin film
CdTe薄膜
1.
Investigation on the crystal structure, optical and electrical properties of Er~(3+) implanted CdTe thin film;
Er~(3+)注入CdTe薄膜的结构和光电性能研究
2.
With large scale CdTe thin film deposition equipment which is designed by ouself independently,and use CSS deposite the CdTe thin film in the air of argon and oxygen mixture,the influence of substrate's temperature uniforminty on the thin film's thincknessand and its micorstructure were studied.
用自行设计的大面积CdTe薄膜沉积设备在混合氩氧气氛下,采用近空间升华法(CSS)沉积大面积的CdTe薄膜,研究衬底温度均匀性对薄膜微结构和厚度均匀性的影响,利用XRD,SEM研究其结构、成分和形貌,结果表明:CdTe薄膜无择优取向,且薄膜总体致密均匀,晶粒大小约为1μm左右。
3.
The CdTe thin films are deposited on the substrate of glass by the method of evaporating simultaneously Cd+Te mixture using molybdenum boat in the vacuum chamber.
用真空气相沉积法 ,同时蒸发Cd和Te材料 ,在玻璃衬底上沉积CdTe薄膜。
2) CdTe thin films
CdTe薄膜
1.
Comparison of CdTe thin films preparation methods and study of struture property;
CdTe薄膜的制备方法比较及其结构性能研究
2.
The CdTe thin films were etched with nitric-phosphoric acid and the effects of etching rates,concentrations and time on the properties of structure,morphology,composition of CdTe thin films were studied.
采用硝酸-磷酸腐蚀CdTe薄膜,研究了硝酸-磷酸腐蚀速率、浓度、时间对薄膜的结构、形貌、组分的影响,获得腐蚀的最佳工艺条件。
3.
CdTe and Te-doped CdTe thin films were prepared by close-spaced-sublimation(CSS) technique.
结果表明,CSS技术制备的CdTe薄膜晶形好,晶粒度较RF方法制备的薄膜增大约100倍。
3) CdTe films
CdTe薄膜
1.
CdTe films are prepared by closed space sublimation technology.
在结晶状况较好的CdS薄膜上生长的CdTe薄膜晶粒较大 ,尺寸均匀。
2.
To find the optimal annealing conditions of CdTe films.
找出CdTe薄膜的最佳退火条件。
4) CdTe film
CdTe薄膜
1.
The average grain sizes of CdTe films are over 10μm.
本论文综述了CdTe太阳能电池材料的应用前景和发展概况,并对多晶薄膜太阳电池的吸收层材料CdTe薄膜的稀土掺杂性质进行了总结和研究。
5) Sb CdTe thin film
Sb-CdTe薄膜
6) CdTe polycrystalline thin films
CdTe多晶薄膜
1.
Influence of vapor CdCl_2 treatment on the properties of CdTe polycrystalline thin films;
气相CdCl_2退火对CdTe多晶薄膜性能的影响
补充资料：cadmium telluride CdTe
分子式：
CAS号：
性质：周期表第II，VI族元素化合物半导体。强离子性的共价键结合。立方晶系闪锌矿型结构，晶格常数0.6477nm，为复式晶格。密度5.86g/cm3。熔点1098℃。室温禁带宽度1.50eV。电子和空穴迁移率分别为6×10-2和6.5×10-3/(V·s)。采用区域熔炼法、高压熔融法制备单晶。用于制作近红外光探测器、γ和X射线谱仪、电光调制器等。
CAS号：
性质：周期表第II，VI族元素化合物半导体。强离子性的共价键结合。立方晶系闪锌矿型结构，晶格常数0.6477nm，为复式晶格。密度5.86g/cm3。熔点1098℃。室温禁带宽度1.50eV。电子和空穴迁移率分别为6×10-2和6.5×10-3/(V·s)。采用区域熔炼法、高压熔融法制备单晶。用于制作近红外光探测器、γ和X射线谱仪、电光调制器等。
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参考词条