1) nc-Si/SiO_2
nc-Si/SiO2
1.
nc-Si/SiO_2 system was fabricated by evaporating SiO powder onto Si(100) substrate to form SiO_x thin film,followed by 1100 ℃ high temperature annealing in nitrogen atmosphere.
真空蒸发SiO粉末,在Si(100)基体上制备SiOx薄膜,后续氮气中1100℃退火制备镶嵌在SiO2基体中的纳米晶Si体系(nc-Si/SiO2),然后将该样品放入真空室,在其上沉积CeF3薄膜,不同温度下热处理使Ce3+扩散到nc-Si附近,实现对纳米晶Si的掺杂。
2) nc-Si/SiO2 thin film
nc-Si/SiO2复合膜
1.
The nonlinear optical properties of nanocrystalline silicon nc-Si/SiO2 thin film were investigated using degenerate four-wave mixing(DFWM).
采用简并四波混频技术(DFWM),研究nc-Si/SiO2复合膜的非线性光学性质,观察到这种纳米薄膜材料的位相共轭信号,测得样品在光波波长在589 nm处的三阶非线性极化率为X(3)=5。
4) SiO_2/Si
SiO2/Si
1.
The stress distribution of a SiO_2/Si waveguide during different sintering step is analyzed theoretically using the finite element method.
采用有限元法对SiO2/Si掩埋光波导制备工艺中的应力变化进行了系统的分析,在此基础上,应用有限差分束传播法(FDBPM)对应力光波导的双折射进行了计算。
5) nc-Ge/Si islands
nc-Ge/Si岛
6) nc-Si particle
nc-Si颗粒
补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
CAS：13170-23-5
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条