1) 2nd annealing at lower temperature
低温二次退火
1.
The key of new process focuses on 2 points:one is lower cold deformation ratio and another is 2nd annealing at lower temperature(250 , 30 min).
工艺的关键在于在相对低的最后一次变形率(ε=30%)条件下,进行低温二次退火(250℃/30min),用该工艺轧制所得银带在自然时效时力学性能十分稳定。
2) low temperature annealing
低温退火
1.
The optimized low temperature annealing parameters for Laves phase Cr2Nb synthesizing by solid phase thermal reaction can theoretically provide guidance for preparing both high strength and high tough Cr2Nb alloy o.
优化出的Cr2Nb固相热反应合成低温退火温度,可为通过MA+热压(或烧结)工艺路线制备具有微/纳米晶结构的高强高韧Cr2Nb合金或Cr2Nb基复合材料提供理论指导。
2.
The optimized low temperature annealing time for Laves phase Cr_2Nb synthesized by thermal solid phase reaction provide possibility for preparing both high strength and toughness Cr_2Nb alloy or Cr_2Nb-based composite with micro-/na.
研究了900℃退火时,退火时间对Cr-Nb机械合金化(MA)粉的Laves相Cr2Nb固相热反应合成的影响规律,获悉了15h MA粉在900℃低温退火时能使Cr2Nb固相热反应合成充分进行的最短时间。
3.
The method of modulating the gate dielectric growth,the intrinsic gettering technique and low temperature annealing technique were applied to eliminate harmful backgrounds.
对电荷耦合器件(CCD)交流成像中存在的背景发白、亮条、亮点、拖影和固定图像噪声等不良背景进行了分析,并提出了调整栅介质生长方法、本征吸杂、低温退火等消除不良背景的具体工艺方法,获得了高质量的CCD器件。
3) Low-Temperature Annealing
低温退火
1.
Effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped Czochralski silicon;
低温退火对重掺砷直拉硅片的氧沉淀形核的作用
4) two-stage successive low-temperature igniting
二次低温点火
5) Secondary annealing
二次退火
1.
Effect of secondary annealing on Al/Ti/n-GaN/Si ohmic contacts;
二次退火对Al/Ti/n-GaN/Si欧姆接触的影响
6) stress relieving annealing furnace
低温退火炉
补充资料：软化退火(见低温退火)
软化退火(见低温退火)
soft-annealing
rU0nhUO tUihUO软化退火(soft一annealing)见低温退火。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条