1) iron-nitrogen film
铁-氮薄膜
2) iron nitrides thin films
氮化铁薄膜
1.
the functionally gradient iron nitrides thin films were prepared by facing targets sputtering.
用对向靶溅射仪制备了具有梯度结构的氮化铁薄膜材料。
3) Amorphous iron nitride thin films
非晶氮化铁薄膜
4) carbon nitride films
碳氮薄膜
1.
Carbon nitride films and Ni doped carbon nitride films were fabricated by a DCfacing-target magnetron sputtering system at room temperature and were subsequentlyannealed at different temperatures.
本论文采用对向靶直流磁控溅射法制备了系列碳氮薄膜和掺Ni碳氮薄膜,并对它们进行了退火处理。
2.
Amorphous carbon nitride films have attracted the attentions of various investigators due to their great physic properties and wide range of promising applications such as protecting coatings, electronic devices and biomedicine devices.
非晶碳氮薄膜由于具有良好的物理性质而备受关注,在防护涂层、电子学器件以及生物医学等领域有着广阔的应用前景。
5) diazo foil
重氮薄膜
6) ferroelectric film
铁电薄膜
1.
The influence of the surface and interface effects on the polarization distribution in ferroelectric films;
表面和界面效应对铁电薄膜极化分布的影响
2.
Effect of stress on the ferroelectric properties of ferroelectric film;
应力对铁电薄膜电滞回线及蝶形曲线的影响
3.
Separated precursor-monomer for sol-gel preparation PZT ferroelectric film;
Sol-gel独立前驱单体制备PZT铁电薄膜技术
补充资料：稀土-铁族金属非晶薄膜磁光材料
分子式：
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条