2) N-implantation
N离子注入
1.
N-implantation into amorphous carbon films with different doses was carried out to study the formation of CN bonding.
利用Raman和XPS研究N离子注入前后非晶碳膜化学键合的变化及CN成键情况。
3) N_ion implantation
离子注N
1.
Effect of N_ion implantation on the anodic polarization behavior of surgery medical materials, such as SUS316L stainless steel,Co_Cr alloy and Ti_6Al_4V alloy, has been investigated with electrochemical technology in artificial body fluid Hank's solution.
采用电化学技术研究了离子注N对人体用金属材料 ,SUS316L不锈钢、钴合金和钛合金在人工模拟体液中的阳极极化行为影响 。
4) ion implantation
离子注入
1.
Study on characteristics and technology of ion implantation-assisted electroless copper plating films on Al_2O_3 ceramics;
离子注入辅助Al_2O_3陶瓷表面化学镀镀层特性研究
2.
Application of ion implantation and D-gun spraying technology to improve Operation life for jet element of fluid efflux hammer;
应用离子注入和爆炸喷涂技术提高液动锤射流元件寿命
3.
Application of low energy ion implantation in breeding of high yield CGTase strains;
低能离子注入在CGTase高产菌株选育中的应用
5) Ion-implantation
离子注入
1.
Substituting Epitaxy by Ion-implantation in the Production of Microphone Devices;
改用离子注入替代外延生产话筒管
2.
Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy;
离子注入诱导量子阱界面混合效应的光致荧光谱研究
3.
Using single energy or overlapped energy ion-implantation technology,a modified layer was formed after C ions implanted into uranium.
利用离子注入技术,分别采用单能量和多能量叠加注入方式在铀表面注入碳形成表面改性层,并对改性层的形貌、注入元素的分布和相结构分别进行扫描电镜(SEM)、俄歇电子能谱(AES)及表面相结构衍射谱(XRD)分析,利用电化学极化法测试注入样品的抗腐蚀性能。
6) implantation
[英][,implɑ:n'teiʃən] [美][,ɪmplæn'teʃən]
离子注入
1.
Ion-implantation-induced transformation and pyrochlore nanodomains in a single crystal YSZ;
离子注入诱发YSZ相变和Pyrochlore纳米晶的电子显微研究
2.
Ion Implantation in Fabricating Strained Si Channel CMOS;
应变Si沟道CMOS中的离子注入工艺
3.
The structure of the aluminum alloy LY12 implanted with N/Ti by plasma based ion implantation (PBII) was characterized using X ray photoelectron spectroscopy (XPS) and glancing X ray diffraction (GXRD).
用X射线光电子能谱 (XPS)和小掠射角X射线衍射 (GXRD)研究了铝合金LY12等离子体基离子注入氮 /钛改性层的结构。
补充资料：离子注入（ionimplantation）
离子注入（ionimplantation）
用离子加速器将各种离子注入半导体材料，从而改变半导体材料的电学、光学或其他物理性质的半导体工艺技术，称为离子注入技术。自从20世纪70年代以来离子注入技术在半导体器件制备工艺中获得了广泛应用，是半导体器件工艺的最主要技术之一。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条