1) immersion lithography
浸没式光刻
1.
Process window improvement is presented due to off-axis illumination(OAI) and phase-shifting mask(PSM) for 193 nm immersion lithography at 65 nm node.
研究了交替型相移掩模及离轴照明对65nm分辨率ArF浸没式光刻的影响。
2.
Immersion lithography improves critical dimension uniformity (CDU) as well as avoiding the necessity for strong resolution enhancement techniques (RET) as compared with dry lithography.
通过比较干法和浸没光刻技术在超越焦深(DOF)提高方面的一些主要特点,举例说明了采用浸没式光刻技术的许多优势。
3.
The principle of immersion lithography is analyzed,several fundamental issues of immersion lithography are discussed,and development status of the immersion lithographic tools is described.
浸没式光刻技术是将某种液体充满投影物镜最后一个透镜的下表面与硅片之间来增加系统的数值孔径,可以将193nm光刻延伸到45nm节点以下。
2) Immersion ArF Lithography
浸没式ArF光刻
1.
Most Recent Development of Immersion ArF Lithography;
浸没式ArF光刻最新进展
3) ArF immersion lithography
ArF浸没式光刻
1.
The effect of off-axis illumination for ArF immersion lithography is studied at 65 nm node.
研究了离轴照明对65nm分辨率ArF浸没式光刻的影响。
4) 193 nm ArF immersion lithography Equipment
193nmArF浸没式光刻机
5) 193 nm ArF immersion lithography technicque
193nmArF浸没式光刻技术
6) immersion lithography
浸入式光刻
1.
193 nm immersion lithography is widely accepted as the first choice for getting to 65 nm and 45 nm nodes.
由于193 nm浸入式光刻技术的迅速发展,它被业界广泛认为是65 nm和45 nm节点首选光刻技术。
2.
193 ArF lithography is the core technique for 90 nm nodes,while 193 nm immersion lithography is widely accepted as the first choice for 65 nm and 45 nm nodes.
指出90nm节点的主流光刻技术是193nmArF光刻;193nm浸入式光刻技术作为65nm和45nm节点的首选光刻技术,如果配合二次曝光技术,还可以扩展到32nm节点的应用,但成本会增加;如果特征尺寸缩小到22nm和16nm节点,EUV光刻、无掩模光刻以及纳米压印光刻等将成为未来发展的重要研究方向。
补充资料：接触式光刻
分子式：
CAS号：
性质：一种原始的复制工艺。将光学掩模版图形面与待光刻区域光致抗蚀剂(或感光乳胶)表面接触而曝光。
CAS号：
性质：一种原始的复制工艺。将光学掩模版图形面与待光刻区域光致抗蚀剂(或感光乳胶)表面接触而曝光。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条