1)  APCVD
APCVD
1.
The Development of TiO_2 Films and the Properties of N-doped TiO_2 Films Prepared by APCVD;
TiO_2薄膜发展现状及APCVD制备掺氮TiO_2性能研究
2.
Effects of Deposition Temperature on the Structure of TiO_2 Films by APCVD;
APCVD法沉积温度对TiO_2薄膜结构的影响
3.
Optical Properties of Ethylene-doped Amorphous Si Film Prepared by APCVD;
乙烯掺杂APCVD法沉积非晶硅薄膜的光学特性
2)  APCVD
常压化学气相沉积
1.
TiN films were coated on glass substrates by atmospheric pressure chemical vapor deposition(APCVD) under different growth conditions,including different substrate temperatures and a gaseous mixture of varying chemical concentrations.
本研究以TiCl4和NH3为反应气体,N2为保护气氛,用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备得到了一系列不同反应温度和原料浓度的TiN薄膜。
2.
N-doped TiO_2 films were grown by atmospheric pressure chemical vapor deposition(APCVD) with TiCl_4 and NH_3 as precursors.
用常压化学气相沉积(APCVD)法,以四氯化钛(TiCl4)、氧气(O2)和氨气(NH3)作为气相反应先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜。
3.
Using TiCl_4,O_2 and NH_3 as the precursors,N-doped titanium dioxide films were prepared by APCVD.
采用常压化学气相沉积(APCVD)法,以四氯化钛(TiC l4)、氧气(O2)氨气(NH3)作为先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜。
3)  APCVD
常压化学气相淀积
1.
Computer Simulation of Polysilicon Films Prepared by APCVD;
常压化学气相淀积多晶硅的计算机模拟
2.
Study of the Growth of Silicon Carbide by APCVD on Porous Silicon Substrate;
本论文提出在多孔硅衬底上,采用常压化学气相淀积(APCVD)生长SiC薄膜的方法:首先通过双槽电化学腐蚀方法在待生长的Si基片上通过电化学腐蚀得到多孔硅结构作为缓冲层,其次再使用常规的APCVD方法在多孔硅结构上异质外延生长SiC。
4)  APCVD
常压化学气相沉积法
1.
SiO2 functional coatings with TEOS as substrate and air as carrier gas were prepared on steel HP40(25Cr35Ni) by means of atmospheric pressure chemical vapor deposition(APCVD).
以正硅酸乙酯为源物质,空气为载气,采用常压化学气相沉积法在HP40(25Cr35Ni)合金钢基体上制备了SiO2涂层;研究了沉积温度、源物质温度以及气体流量等工艺参数对沉积速率的影响,并通过XRD和SEM分析了涂层的物相组成及表面形貌。
2.
High activity TiO_2 and its composite catalyst were prepared by Atmospheric PressureChemical Vapor Deposition (APCVD) in this paper.
本文采用常压化学气相沉积法(Atmospheric Pressure Chemical Vapor Deposition，APCVD)制备了TiO_2纤维及其掺杂复合催化剂，通过各种现代分析手段对制得的催化剂进行了表征；并进行了光催化活性测定。
5)  APCVD
常压化学气相沉积（APCVD）
6)  APCVD method
APCVD法
参考词条
补充资料：气相沉积
气相沉积
气相沉积

化学气相淀积[cvd(chemical vapor deposition)]，指把含有构成薄膜元素的气态反应剂或液态反应剂的蒸气及反应所需其它气体引入反应室，在衬底表面发生化学反应生成薄膜的过程。在超大规模集成电路中很多薄膜都是采用cvd方法制备。

cvd特点：淀积温度低，薄膜成份易控，膜厚与淀积时间成正比，均匀性，重复性好，台阶覆盖性优良。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。