1) anisotropic magnetoresistance(AMR) effects
各向异性磁电阻(AMR)效应
2) anisotropic magnetoresistance(AMR)
各向异性磁电阻(AMR)
1.
An Al2O3 layer with a proper thickness can enhance the anisotropic magnetoresistance(AMR) value without damaging the magnetic properties of permalloy films.
各向异性磁电阻(AMR)薄膜材料被广泛应用于磁传感器和硬盘的读出磁头中。
3) anisotropic magnetoresistance effect
各向异性磁电阻效应
4) aeolotropism resistivity AMR
各向异性电阻率AMR
5) AMR
各向异性磁电阻
1.
Study on AMR Properties of Ni_(65)Co_(35) Thin Films;
Ni_(65)Co_(35)薄膜各向异性磁电阻性能的研究
2.
A “mixed” effect of the free and pinned layers on anisotropic magnetoresistance (AMR) has been obtserved.
结果表明 ,在样品中存在着自由层和被钉扎层之间的各向异性磁电阻的“混合”效应 。
3.
The zero field resistivity (ρ), anisotropy magnetoresistance (AMR) and microstructures for both as-grown and post-annealed films are measured.
5nm)/Ni82Fe18(tnm)/Ta(3nm)坡莫合金系列膜,并进行了中温退火(200°C),测量了退火前后样品的零场电阻率(ρ),各向异性磁电阻(AMR)和微结构;从实验角度研究了中温退火对ρ和AMR随NiFe厚度(t)变化的影响,并探讨了该影响的微观机制。
6) Anisotropic magnetoresistance
各向异性磁电阻
1.
Effects of sputtering conditions on the anisotropic magnetoresistance of Ni_(80)Fe_(20) thin films;
溅射条件对Ni_(80)Fe_(20)薄膜各向异性磁电阻的影响
2.
Effects of seed layers on the anisotropic magnetoresistance of NiCo films;
种子层对NiCo薄膜各向异性磁电阻效应的影响
3.
Studies of the process technology and microstructure of Ni_(81)Fe_(19) anisotropic magnetoresistance films;
Ni_(81)Fe_(19)各向异性磁电阻薄膜的工艺和微结构的研究
补充资料：AMR
AMR全称AnisotropicMagnetoResistive，一种磁头技术，AMR技术可以支持3.3GB/平方英寸的记录密度，在1997年AMR是当时市场的主流技术。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条