1) conductive mechanism
导电机理
1.
The composition and the type of electrically conductive adhesives are introduced,and some conductive mechanisms are briefly summarized from the points of macroscopical and microcosmic view.
介绍了导电胶的组成与类别,从宏观和微观角度对几种导电机理进行了概述。
2.
On the basis of researching the principle of electromagnetic shielding,the properties of conductive composite plastic were reviewed,the conductive mechanism and the effects on electromagnetic shielding effectiveness were mainly illuminated,the study directions and the application prospects of these materials were also looked.
论述了电磁屏蔽复合塑料的特性,并重点讨论了复合型电磁屏蔽塑料的导电机理和影响因素,最后对其应用研究方向以及发展趋势进行了展望。
3.
The conductive mechanism is analyzed.
讨论了Al,B和Zr在碳化硅中的存在形式,并分析了试样的导电机理。
2) conducting mechanism
导电机理
1.
This paper reviews researches on the functional conducting organic coatings in recent years, including their classification, effects on the conducting behaviour, mixture conducting mechanism and their application.
综述了功能导电涂料的分类、导电性能的影响因素、掺杂导电机理,及其涂料的用途。
2.
The conducting mechanism and preparation status of nano-sized antimony doped tin oxide (ATO) are introducted.
从二氧化锡的应用出发,总结了锑掺杂二氧化锡的导电机理和该材料湿相制备方法的研究现状。
3.
The conducting mechanism of antimony doped tin oxide (ATO) is sumed up.
归纳总结了锑掺杂二气化锡(ATO)的导电机理,晶格的氧缺位、5价Sb杂质在SnO_2禁带形成施主能级并向导带提供n-型载流于是ATO导电的两种主要机理。
3) conduction mechanism
导电机理
1.
The Conduction Mechanism of Nonmetal and the Method for the Measure of the Conductance;
非金属材料的导电机理与电导率的测量
2.
Application and progress of percolation theory in the process of study for conduction mechanism of conductive composites were introduced.
介绍了近年来渗流理论在导电复合材料机理研究中的应用和最新进展;系统分析了目前比较流行的几种渗流理论模型与实际研究体系的差异;提出了由于影响导电机理因素的多样性和复杂性,因而只有将各种理论模型有机结合,并通过对其进行进一步的修正、完善,才能对导电网络形成机制作出满意的解释。
3.
By means of SEM, X-ray analysis, thermogravimetric analysis and thermoanalysis, the conduction mechanism of the material is illustrated.
这一导电机理能成功地解释贱金属电子浆料的一些实验现
4) conductivity mechanism
导电机理
1.
Properties and conductivity mechanism of ITO films prepared by r.f.magnetron sputtering;
射频磁控溅射沉积ITO薄膜性能及导电机理
2.
The research status and progress in conductivity mechanism,mathematical model,reactor structure and application of FBER are reviewed in this paper,and the key problems in its scale-up,design and modeling are analyzed,and some research topics in this respect are also recommended.
就流化床电化学反应器在导电机理、数学模型、结构放大以及应用领域的研究现状和进展进行了综述,阐明了该类反应器开发、设计和模型化方面存在的问题,并提出了研究方向。
3.
The conductivity mechanism of filling conductive polymer composite materials was introduced by using theories of percolation,quantum mechanics tunneling effect and field emission.
采用渗流理论、量子力学隧道效应理论和场致发射效应等理论,对填充复合型导电高分子材料的导电机理进行了分析介绍;从聚合物的结构、导电填料的种类、性能、用量、复合材料制备方法、加工及使用条件等因素,分析了影响填充复合型导电高分子材料导电性能的主要因素。
5) electric conduction mechanism
导电机理
1.
Water saturation explanatory model of argilla-ceous sandstone under the macroscopically electric conduction mechanism;
宏观导电机理下的泥质砂岩含水饱和度解释模型
2.
This paper reviews the fabrication processes of deformation processed Cu-based in-situ composites as well as microstructure evolution and combined properties, introduces the strengthening and electric conduction mechanisms of this materials.
综述了形变原位铜基复合材料的制备方法、组织演变及综合性能特点,介绍了该类材料的强化和导电机理。
补充资料：半导体材料导电机理
半导体材料导电机理
conduction mechanism in semiconductor
bandaot{eall旧0 daodianJ}l-半导体材料导电机理(。onduetion meeha-nism in semieonduetor)半导体导电的特异性能是由它的导电机理决定的。半导体材料中除中子外还存在着带正电荷的空穴。在外电场作用下，电子和空穴漂移运动引起导电。电子和空穴统称载流子。导体的电阻R(n)可表示成 D_丝 R一卜于 S式中L为导体的长度，。m;S为导体的截面积，cmZ;尸为电阻率，n·cm。尸是表征导电能力大小的物理量。p的倒数，为电导率，以日一’·cm一’表示。I~v/R为熟知的欧姆定律，其微分形式为电流密度j(A/mZ) ]一aE式中E为某点的作用电场，V/m疥为比例系数。电流密度还可表示成 j=nq vd式中、为电子浓度，Cm一3;q为电子电荷，c;乱为平均漂移速度，。m/s。半导体中产生载流子的途径有两种:(l)本征激发:在温度的作用下，电子从价带顶直接激发到导带底，产生电子一空穴对，因此电子浓度等于空穴浓度，一p一n，，nlocT3/2‘勺ZKT，式中E:为禁带宽度;K为玻耳兹曼常数;T为绝对温度，K;n、为本征载流子浓度，cm一3，它强烈依赖于温度T。(2)杂质电离:浅能级施主杂质电离后，贡献电子给导带。室温下，施主掺杂浓度ND大于ni，主要是电子起导电作用，称为n型半导体，电子是多子，空穴是少子。反之，受主电离后，贡献空穴给价带，主要是空穴起导电作用，为p型半导体，空穴是多子，电子是少子。定义迁移率产一}剖，恙，式中:是平均漂移速度，。/s;二是夕卜电场强度，V/m。即单位电场作用下的平均漂移速度，表示载流子在外场作用下运动的难易程度。载流子在运动过程中，不断受到散射，川mZ/V·s)与散射的平均自由时间r成正比，有下列关系 产二共式中q为电子电荷，C;m‘为有效质量，kg。:是散射的平均自由时间，s。散射主要有:(1)晶格散射，考虑其中的声学波散射，迁移率与温度的关系可表示成产，ccT一3/2。(2)电离杂质散射，迁移率与温度和电离杂质浓度N:的关系可表示成产.oc洲/2/N;。半导体的电导率为 n型:。。=nq产n p型:。p一Pq脚混合型:。，nq群n+Pq脚式中。为电子浓度，cm一3;p为空穴浓度，cm一3;肠为电子迁移率，cmZ/v·。;产。
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