have been gained by analyzing eptaxial STO films with a high resolution X-ray diffractometer(HRXRD+ TAXRD).

The effect of annealing time on the epitaxial strain in GaN films was detailedly studied by high-resolution X-ray diffraction(HRXRD).

Combining Rutherford backscattering/channeling (RBS/C) and high-resolution X-ray diffraction (HXRD) measurements, we investigate the radiation damage in GaN films with various doses and angles of Mg~+_implantation.

Micropipes and low-angle boundaries in 6H-SiC (0001) wafer are determined by transmission polarized light microscopy, synchrotron X-ray topography and high-resolution X-ray diffraction method, respectively.

In this thesis, high-resolution X-ray diffraction and transmission electron microscope were used to analyze the microstruction of GaN LED on sapphire substrate.

Strain in Al I[WTFZ]nGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution x-ray diffraction;

A hexagonal GaN layer with a LT-AlN(low temperature) interlayer grown on Si(111) by metal-organic chemical vapour deposition(MOCVD) method was characterized by high resolution X-ray diffraction(HRXRD) and Rutherford backscattering(RBS)/channeling.

Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively.

Synchrotron radiation double-crystal topography (SRDT) in combination with high-resolution triple-axis X-ray diffraction (HRTXD) is employed to characterize Si/SiGe/Si-SOI subjected to in-situ low-temperature annealing.