1) VO2 thin films
VO2薄膜
1.
V2O5 thin films were prepared by RF magnetron sputtering method with V2O5 ceramic target,which were reduced into VO2 thin films annealed in argon atmosphere at 450℃.
以V2O5陶瓷烧结靶材及射频磁控溅射工艺制备V2O5薄膜,再经氩气气氛退火处理得到VO2薄膜。
2.
A novel method of preparing VO2 thin films―V2O5 melting formation thin films method was developed, whose steps include the pretreating substrates→powder-coated→the thin films formed by the V2O5 melting→annealing under vacuum→VOthin films.
发展了一种新的VO2薄膜制备方法—V2O5熔化成膜法,其基本步骤为:基片预处理—涂粉—熔化成膜—真空退火—VO2薄膜。
3.
The effects of process parameters such as drying temperature, vacuum heat treatment temperature and the sol concentration on the vanadium valences in the VO2 thin films were studied by X-ray photoelectron spectroscopy (XPS).
采用无机溶胶-凝胶法制备了VO2热致变色薄膜,利用XPS系统地研究了烘干温度、真空热处理温度以及溶胶浓度对VO2薄膜中钒价态的影响。
2) VO 2 thin film
VO2薄膜
3) VO2 thin film
VO2薄膜
1.
The soft-chemical fabrication technologies of thermochromic VO2 thin films have been introduced.
综述了采用软化学方法制备VO2薄膜的工艺技术特点,以前驱物的划分为主线,着重探讨了前驱物的选择、氧分压和热处理温度等工艺条件对其物相结构与性能的影响,对反应热力学进行了初步的探讨。
4) VO2 film
VO2薄膜
1.
Mixture of ammonium tungstate and vanadium pentaoxide powder was used as a precursor to prepare W doped VO2 films on the muscovite (001) substrate by inorganic sol-gel method.
采用无机溶胶-凝胶法,以钨酸氨和V2O5的为原料在高温下共熔水淬实现钨掺杂,在云母片(001)表面制备W掺杂VO2薄膜。
2.
Thermal infrared detecting VO2 film has been prepared by radio frequency megnetron sputtering deposition and argon atmosphere annealing.
采用射频磁控溅射沉积方法,结合氩气氛退火工艺制备了热红外探测VO2薄膜,通过优化工艺,制备出化学计量比接近理论值、高质量的VO2薄膜。
5) VO_2 thin film
VO2薄膜
1.
The VO_2 thin films were deposited on the glass substrate using the DC magnetron sputtering method under the conditions that m(O_2)/m(Ar) was 1∶12.
2 Pa,用DC磁控溅射法在玻璃基上沉积VO2薄膜,并经真空退火处理,制备的试样通过XPS测试分析薄膜表面的元素组成及成分。
6) vanadium dioxide film
VO2薄膜
1.
The newest development of the vanadium dioxide film is introduced,and its future research is discussed to expand its application.
综述掺杂改性的一般方法,各种不同掺杂元素对VO2薄膜相变、电学性能和光学性能的影响,介绍掺杂VO2的最新研究进展,并为扩大其应用领域探讨今后的研究方向。
2.
Preparation and characterization technology of vanadium dioxide film
综述了目前VO2薄膜主要的制备方法(sol-gel法,蒸发法,脉冲激光沉积,溅射法和CVD)及其优缺点;以及X射线技术、光电子能谱、光谱技术、显微技术等表征手段在VO2薄膜研究中的应用。
补充资料：(beta-4)-vanadate (vo43-tripotassium
CAS：14293-78-8
分子式：K3VO4
中文名称：钒酸三钾
英文名称：tripotassium, (T-4)-Vanadate；Potassium vanadate (ortho)；(beta-4)-vanadate (vo43-tripotassium；Vanadate,tripotassium,(T-4)-；Potassium vanadate(ortho)
分子式：K3VO4
中文名称：钒酸三钾
英文名称：tripotassium, (T-4)-Vanadate；Potassium vanadate (ortho)；(beta-4)-vanadate (vo43-tripotassium；Vanadate,tripotassium,(T-4)-；Potassium vanadate(ortho)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条