1) sheet resistance
方块电阻
1.
Kinetics of the oxidation process of the copper films in the thickness range of 16～22 nm at 140 ℃ was studied by using transmission spectrum and sheet resistance methods.
采用方块电阻和透射光谱两种方法为表征手段,测量16～22nm范围内不同厚度Cu薄膜在140℃下完全氧化所需要的时间,得到了Cu薄膜氧化反应的动力学曲线,并利用X射线衍射(XRD)分析了氧化产物的晶相结构和成分。
2.
The sheet resistances and reflectivity of ultra-thin aluminum and nickel films were measured when they were applied to foam with different thickness.
测量了Al,Ni薄膜的方块电阻及其用于不同厚度泡沫结构的平板反射率,实验结果表明:超薄金属膜结构可以实现谐振吸收;吸波性能由介质材料和金属薄膜共同决定。
3.
Then,the effects of heat treatment and temperature on the chemical composition and sheet resistance of the prepared films were investigated by XRD,EDXS and sheet resistance measurements.
利用X射线衍射和能量散射X射线能谱表征方法,并结合薄膜方块电阻的测定,探讨了热处理方式和热处理温度对薄膜化学组成及薄膜电阻的影响。
2) square resistance
方块电阻
1.
2 order change on square resistance from 60℃ to 85℃.
将制备好的金属钒薄膜置于440℃空气下氧化处理,获得相变温度为60℃的单斜VO2薄膜,薄膜方块电阻值在60～85℃范围内变化量达2。
2.
Analyzing the problems which often happen in the portable square resistance meter for the thin films on ITO glass surface,some solutions were proposed and carried out by tests.
针对手提式薄膜方块电阻测试仪在使用中容易出现的问题,进行分析研究,提出了解决方案,并在实验中得到实现。
3.
The electro-magnetic shielding effectiveness of the plated Cu layer reaches 25-40 dB and the square resistance is up to about 0.
施镀时间在10～15min之间时,镀铜层的电磁屏蔽效能可达25～40dB,方块电阻达到0。
3) block resistance
方块电阻
1.
The first is definition of ITO; the second is definition of block resistance; the third is precise calculation of ITO resistance, and the fourth, analyzing the factors affecting the ITO resistance.
论述了ITO、方块电阻的定义及ITO阻值的精确计算 ,并结合实际应用讨论了影响ITO阻值的因素 ,对版图设计和LCD生产的过程控制有一定的借鉴意义。
4) film rectangular resistance
薄膜方块电阻
5) Square resistance measurement
方块电阻测量
6) in situ sheet resistance
原位方块电阻测量
补充资料：方块电阻
分子式：
CAS号：
性质：在长和宽相等的样品上测量的真空金属化镀膜的电阻。方块电阻的大小与样品尺寸无关。
CAS号：
性质：在长和宽相等的样品上测量的真空金属化镀膜的电阻。方块电阻的大小与样品尺寸无关。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条