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1)  annealing treatment
退火热处理
1.
5)hydrogen storage alloys at high temperature (333K)was investigated;Second,the effect of annealing treatment (1173K)on the electrochemical properties of La_(0.
5)储氢合金,第一步研究B/A比的变化对该系列材料的高温(333K)电化学性能的影响;第二步研究了1173K退火热处理对La_(0。
2)  annealing [英][ə'ni:liŋ]  [美][ə'nilɪŋ]
退火热处理
1.
The Co-Pt alloy thin films have been successfully synthesized on the substrate of copper and single crystal Si(110) wafer by electrodeposition from the alkaline plating bath containing ammonium tartrate as complexing agent and by subsequent annealing.
本论文采用电化学恒电流法,通过改变阴极电流密度和电镀液中不同金属盐组分,在铜和单晶Si(110)基底上沉积制备得到了不同Pt摩尔分数的Co-Pt合金薄膜,并对制备得到的Co-Pt合金薄膜进行了不同温度的退火热处理使其转变为L1_0型超晶格结构的Co-Pt合金。
2.
Co-Pt alloy thin films have been successfully synthesized on a copper substrate by electrodeposition from an alkaline plating bath containing ammonium tartrate as complexing agent followed by subsequent annealing.
采用酒石酸铵为络合剂,碱性溶液作为电解液沉积体系,利用电化学共沉积法在铜基底上制备得到了Co-Pt合金薄膜,并对制备得到的合金薄膜进行了不同温度的退火热处理
3)  thermal annealing
热退火处理
1.
In order that ZnS films can be applied in various optoelectronics devices, it is necessary that we should improve (or change) physical and chemical properties of ZnS thin films, both doping and thermal annealing are very important means.
为了使得ZnS薄膜能广泛应用于各类光电器件,有必要改善(或者改变)ZnS薄膜的物理、化学等性能,在ZnS薄膜中掺入杂质元素和热退火处理就是其中两种重要的方法,尤其是ZnS薄膜的p型掺杂显得尤为重要。
4)  annealing treatment with electric field
电场退火热处理
5)  postweld annealing heat treatment
焊后退火热处理
6)  isothermal annealing heat treatment
等温退火热处理
补充资料:玻璃退火(见玻璃热处理)


玻璃退火(见玻璃热处理)
annealing of glass

瓣严巍艺棘洪薰l鬓
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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