Recent development of chemical mechanical polishing;

Study on Pad Groove Design in Chemical Mechanical Polishing;

Investigation of functions and effects of polishing pad conditioning in chemical mechanical polishing;

Thin Film Flows at Nano Scale in CMP;

CMP Effect and Super-smooth Surface Acquirement;

Advanced Process Control Extends ECMP Process Consistency;

Presents a sequence of order-of-magnitude calculations based on the concepts of chemical kinetics and transport phenomena during the chemical mechanical polishing(CMP) process.

Slurry flow weighs heavily on the performances of chemical mechanical polishing(CMP) process,wherein the pad surface will alter the flow features considerably.

For high-quality and high-efficiency chemical mechanical polishing(CMP) of multilayer interconnection in ultralarge-scale integrated(ULSI) circuit,the silica sol nano-abrasive with large-particle and lowpolydispersition was prepared by polymerization growth technique with control of constant liquid level.

In order to obtain the effect of carrier film on contact pressure distribution in the chemical-mechanical polishing(CMP) of silicon wafer,a mechanism model and a boundary equation were set up,then the contact pressure distribution was calculated and analyzed by use of finite element method,and the calculated result was verified by polishing experiments.

In traditional chemical-mechanical polishing of silicon wafer,the surface quality and efficiency of silicon wafer polishing is not satisfactory and need to be improved when the diameter of a silicon wafer becomes bigger and bigger.