1) HF etching
氢氟酸刻蚀
1.
The interface was fabricated by using HF etching on a 50 μm i.
对普通石英毛细管表面使用氢氟酸刻蚀技术进行刻蚀,并与商品化鞘流液毛细管电泳-质谱接口(Sheathflow CE-MS interface)结合,将其改装成一种新型的纳升级电喷雾质谱接口。
2) hydrofluoric acid etch
氢氟酸蚀刻
4) buffered hydrofluoride acid
氢氟酸缓冲腐蚀液
1.
Results of a study into the etching characteristics of dry thermal trichloroethylene-growth silicon dioxide in different compositions of buffered hydrofluoride acid(BHF) are presented.
根据对掺三氯乙烯(TCE)干氧氧化的S iO2在不同配比氢氟酸缓冲腐蚀液(BHF)中的腐蚀特性的研究结果表明,在HF w t%保持不变的条件下,腐蚀速率先随着NH4F w t%的增大而上升;NH4F大于15w t%~20w t%以后,腐蚀速率反而随之降低。
5) H atoms etching
氢原子刻蚀
6) acid etching technique
酸洗刻蚀
1.
By the acid etching technique, many impurities in matrix materials wereremoved and pore canals were etched.
该方法通过酸洗刻蚀,达到了去除原材料中的杂质和刻蚀孔径的目的,所制备的中间产品24 h吸湿率为原材料的2倍,染料吸附量为原材料的1。
补充资料：传刻
1.辗转刻印。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条