1) ZnS thin films
ZnS薄膜
1.
The influence of some complexing agents upon chemical bath depositing ZnS thin films;
络合剂对化学水浴沉积ZnS薄膜的影响
2.
A Study of Preparation of ZnS thin films by CBD;
化学浴沉积法制备ZnS薄膜的研究
3.
ZnS thin films were prepared on glass sides by chemical bath deposition(CBD),using zinc sulfate and(NH4)2S2O3 as precursor aqueous solutions,a little amount of sodium citrate is used as complexing agent and glycerol as disperse agent,the surfaces of deposited thin films were homogeneous.
以硫酸锌、(NH4)2S2O3混合溶液为前驱体溶液,加入少量的柠檬酸钠和丙三醇为络合剂和分散剂,采用化学浴沉积法在玻璃衬底上成功制备了表面均匀的ZnS薄膜。
2) ZnS thin film
ZnS薄膜
1.
Influence of annealing on ZnS thin films by PLD;
退火处理对脉冲激光沉积制备ZnS薄膜的影响
2.
Effect of N_2H_4 concentration on ZnS thin film prepared by chemical bath deposition
联氨浓度对化学溶池沉积ZnS薄膜的影响
3.
ZnS thin films were deposited by YAG laser(1064nm) and pulsed XeCl(308nm) laser with radio frequency plasma,varying the deposition temperature.
采用YAG固体激光器(1064nm)和XeCl(308nm)准分子激光器,利用射频辅助脉冲激光沉积技术,研究了在不同沉积温度下对制备ZnS薄膜的影响。
3) ZnS films
ZnS薄膜
1.
Effect of substrate temperature on microstructure and stress of ZnS films;
衬底温度对ZnS薄膜微结构和应力的影响
2.
Optical properties of ZnS films prepared by chemical bath deposition;
化学水浴法制备ZnS薄膜光学性能
3.
Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films;
ZnO退火条件对硫化法制备的ZnS薄膜特性的影响
4) ZnS film
ZnS薄膜
1.
Study on sputter property and effect of ion source on refractive index of ZnS film;
离子源的溅射特性及其对ZnS薄膜折射率的影响
2.
The ZnS films were deposited on ITO by using constantpotential electro-deposition,and were studied by using X-ray diffraction(XRD),scan electron microscope(SEM),atomic force microscope(AFM) and X-ray photoelectron spectroscopy(XPS) techniques.
利用恒电位电沉积技术实现在ITO导电玻璃上沉积ZnS薄膜,用X射线粉末衍射、扫描电镜、原子力显微镜和X射线光电子能谱对制得的薄膜进行了研究。
5) chemical bath deposition
ZnS薄膜
1.
ZnS thin films prepared by chemical bath deposition;
化学水浴法制备ZnS薄膜
6) ZnS-SiO2 thin film
ZnS-SiO2薄膜
补充资料：cubic β-ZnS structure
分子式：
CAS号：
性质：又称立方硫化锌型结构（cubic β-ZnS structure）。属等轴晶系。晶体结构中B原子呈立方密堆积，A原子填充在B原子构成的四面体空隙中。A、B原子的配位数均为4。A—B原子间为共价键联系。属闪锌矿型结构类型的化合物有：亚铜的卤化物，铍的氧化物，硼、铝、镓和铟的磷化物，砷化物和锑化物，以及碳化硅，单质碳和单质硅等。其中III～V族和II-VI族化合物是重要的半导体材料，单质硅是最成熟的半导体。
CAS号：
性质：又称立方硫化锌型结构（cubic β-ZnS structure）。属等轴晶系。晶体结构中B原子呈立方密堆积，A原子填充在B原子构成的四面体空隙中。A、B原子的配位数均为4。A—B原子间为共价键联系。属闪锌矿型结构类型的化合物有：亚铜的卤化物，铍的氧化物，硼、铝、镓和铟的磷化物，砷化物和锑化物，以及碳化硅，单质碳和单质硅等。其中III～V族和II-VI族化合物是重要的半导体材料，单质硅是最成熟的半导体。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条