1) back scatter electron technology
背散射电子技术
2) EBSD technology
电子背散射衍射技术
1.
Through EBSD analyzing systems mounted on Field Scanning Electronic Microscope, it can complete microstructure analysis of crystallographic structures and orientations of block sample, which can interconnect microstructure observation, micro-area chemical analysis and crystallography data analysis, and the EBSD technology become the most important analysis technology in Material Science R.
较详细地阐明了电子背散射衍射技术(EBSD)的基本原理、实验分析方法。
3) electron back scattering diffraction technique(EBSD)
电子背散射衍射技术(EBSD)
1.
The grain orientation distribution,grain angle,microstructure texture and stability of retained austenite of a cold-rolled TRIP steel treated by different process were investigated by electron back scattering diffraction technique(EBSD).
利用电子背散射衍射技术(EBSD)技术分析了两种不同热处理工艺下的TRIP800钢板取向分布、晶粒角度、显微织构与残余奥氏体的分布及其稳定性,并结合试验钢的力学性能进行了讨论。
4) neutron backscatter technique
中子背散射技术
1.
Gamma scanning and neutron backscatter techniques,which are widely used in petrochemical plants,are briefly introduced.
对γ射线扫描技术和中子背散射技术的基本原理及其在石油化工装置中的主要应用进行了简要介绍。
5) backscattered electron
背散射电子
1.
Emission of the backscattered electrons from ultra-thin film on substrate under the action of low-energy beams;
低能束作用下衬底上超薄膜背散射电子发射
2.
Using Monte Carlo method, both emission and spatial distributions of the backscattered electrons(BSEs) of the solids Al,Cu,Ag,Au under the action of low energy electrons with energy E 0≤5*!keV have been simulated and calculated.
应用MonteCarlo方法 ,对能量E0 5keV低能电子作用下固体Al、Cu、Ag、Au的背散射电子发射及表面空间分布作了计算 。
3.
The spatial distribution of backscattered electron in solids have been calculated by Monte Carlo method, based on Mott cross-seCtion for elastic scattering as well as Streitwolf,Quirm and Gryzinski s cross-section for inelastic scattering.
应用MonteCarlo方法,对不同能量低能电子作用下背散射电子在固体中的空间分布作了计算,电子的弹性散射用Mott截面描述、非弹性散射按文献[3]的方法由Streitwolf。
6) backscattering/channeling technique
背散射/沟道技术
1.
The lattice damage in GsAs irradiated by 1MeV Si ̄(+) at room temperature and elevated substrate temperature has been investigated using Rutherford backscattering/channeling technique.
用卢瑟福背散射/沟道技术研究了1MeVSi ̄+在350℃高温和室温下以不同剂量注入GaAs后的晶格损伤。
补充资料:背伛偻
背伛偻
背伛偻 病证名。曲背俯身,部分脊椎突出,按之高耸之证。见《东医宝鉴·外形篇》。又名大偻、背偻、俗称“驼背”。属督脉病变,因督脉亏虚,精髓不充,或湿邪伤于督脉所致。《杂病源流犀烛·胸膈脊背乳病源流》:“背伛偻;年老伛偻者甚多,皆督脉虚而精髓不充之故,此当用补肾益髓之剂;若少壮之人;忽患伛偻,并足挛,脉沉弦而细;皆中湿故也,宜煨肾散。”亦可因体虚感受风寒所致。参见大偻、背偻条。见于胸椎结核、先天性胸椎后突畸形、类风湿性脊柱炎。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条