1) silicon crystal
硅晶体
1.
The fixed-abrasive wire sawing technology is supposed to be used for slicing hard-brittle materials such as silicon crystal widely in the future,and the development of high performance fixed-abrasive diamond wire saw is the key of application for this technology.
固结磨料金刚石线锯切割技术有望在将来广泛地应用于硅晶体等硬脆材料的切割,而高性能的固结磨料金刚石锯丝的研制是此技术发展应用的关键。
2.
This treatment is effective in refining and sphericizing primary silicon crystal,forming microconstituents of dispersion.
达到了细化、球化硅晶体的效果， 获得了分布均匀的微观组织。
2) Crystalline silicon
晶体硅
1.
Characterization of crystalline silicon solar cells by electrical parameters;
用电学参数表征晶体硅太阳电池特性
2.
The current solar photovoltaic panels are developing rapidly from the first generation solar cells,which are based on the standard crystalline silicon,to the second generation photo cells using different thin films.
当前的光伏产业正由基于晶体硅的"第一代"技术,向使用薄膜的"第二代"技术转变。
3.
It is pointed out that the current solar photovoltaic panels are developing rapidly from the first generation photo cells,which are based on the standard crystalline silicon,to the second generation photo cells using different thin films.
简要介绍了国内外光伏发电技术研究现状和发展趋势,重点介绍了国内外新的"第三代"光伏发电技术,即"4倍聚焦+跟踪+太阳能炼硅+晶体硅(p型或n型)+薄膜"的光伏发电技术。
3) Bulk Crystal Silicon
体晶硅
4) thin crystalline silicon
薄晶体硅
1.
Back electrode paste of industrialized thin crystalline silicon solar cell;
工业化薄晶体硅太阳电池背电极浆料
6) crystals of silica
硅石晶体
补充资料：碲化铋晶体
分子式：Bi2Te3
CAS号：
性质：周期表第V,VI族元素化合物半导体。三角晶，原胞为菱形六面体，晶格常数1.0473nm，密度7.8587g/cm3。熔点575℃。由共价键结合，有一定离子键成分。为间接带隙半导体，室温禁带宽度0.145eV，电子和空穴迁移率分别为0.135和4.4×10-2m2/(V·s)，温差电优质系数1.6×10-3/K。采用布里奇曼法、区域熔炼法、直拉法制备。为良好的温差材料。
CAS号：
性质：周期表第V,VI族元素化合物半导体。三角晶，原胞为菱形六面体，晶格常数1.0473nm，密度7.8587g/cm3。熔点575℃。由共价键结合，有一定离子键成分。为间接带隙半导体，室温禁带宽度0.145eV，电子和空穴迁移率分别为0.135和4.4×10-2m2/(V·s)，温差电优质系数1.6×10-3/K。采用布里奇曼法、区域熔炼法、直拉法制备。为良好的温差材料。
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参考词条