1.
Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;
基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
2.
The Study of Growth of SiGe Thin Films and Electrical Properties by UHVCVD;
UHVCVD生长锗硅薄膜及其电学性能研究
3.
40-Gb/s Demultiplexer Based on SiGe Process
基于锗硅工艺的40-Gb/s分接器
4.
Research on Relaxation of SiGe/SOI and Fabrication of SSOI Materials;
SOI基锗硅弛豫研究及绝缘体上应变硅材料制备
5.
The Mechanism of No Phonon Optical Transitions in SiGe Alloy
锗硅合金半导体中无声子参与光跃迁机制研究
6.
Research in Growth of Poly-Si_(1-x)Ge_x on SiO_2 by UHVCVD;
利用UHV/CVD在SiO_2薄膜上生长多晶锗硅薄膜的研究
7.
Solar cell industry and application of silicon germanium thin film;
太阳能电池产业与半导体锗硅薄膜的应用综述
8.
Study of the Low-dimensional Structures on the SiGe Alloys and the Photoluminescence;
硅锗薄膜上低维结构及PL光谱研究
9.
Study of Si-based Ge PIN Infrared Detector with Numerical Simulation
硅基锗PIN红外探测器的数值模拟研究
10.
Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films
非晶硅和非晶硅锗薄膜的金属诱导结晶
11.
Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T1551-1995硅、锗单晶电阻率测定直流两探针法
12.
Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T1552-1995硅、锗单晶电阻率测定直排四探针法
13.
"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."
常用的本质半导体是硅、锗以及砷化镓等的单晶。
14.
The Study of Photics Character and Thermoelectrical Properties of Silicon-Germanium Alloys;
硅锗合金光学性质及热电转换性能的研究
15.
Study and Improvement of Silicon Based Germanium Quantum-dot Near Infrared Photodetecter;
硅基锗量子点近红外探测器的研究和改进
16.
Study of Impurities and Defects in Germanium Doped Czochralski Silicon for Photovoltaic Applications;
掺锗直拉硅中的杂质缺陷及其光伏应用研究
17.
A Theoretical Study of Structure and Aromaticity of CSiGe Tetramer Clusters;
碳硅锗四原子团簇结构和芳香性的理论研究
18.
The Molecular Simulation for Evolution of the Partial Dislocation in Sige Heterostructures
硅锗异质结构中部分位错演化的分子模拟