1.
STUDY ON STRESSES CHARACTERISTICS OF MEMS SCANNING MICROMIRROR WITH END-RESTRAINED SINGLE CRYSTAL SILICON TORSION BAR
端面约束单晶硅直梁MEMS扫描微镜应力特性研究
2.
We made the Czochralski silicon single crystal with a diameter of 12 inches.
直径12英寸直拉单晶硅研制成功。
3.
The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches
8英寸直拉硅单晶抛光片
4.
Investigation of Oxygen Precipitation and Internal Gettering in Czochralski Silicon;
直拉硅单晶的氧沉淀及内吸杂的研究
5.
Application of Nitrogen-doped Czochralski Silicon in Solar Cell;
掺氮直拉单晶硅在太阳电池中的应用
6.
Investigation on Rapid Thermal Processing of Czochralski-grown (CZ) Silicon;
直拉硅单晶的快速热处理（RTP）研究
7.
Bending Test of Young's Modulus of Crystalline Silicon Nano-Beam
单晶硅纳米梁杨氏模量的弯曲测试(英文)
8.
Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T1551-1995硅、锗单晶电阻率测定直流两探针法
9.
Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T1552-1995硅、锗单晶电阻率测定直排四探针法
10.
Defect Engineering in Czochralski Silicon Used for Large-scale Integrated Circuits;
大规模集成电路用直拉硅单晶的缺陷工程
11.
Simulation of CZ and Optimizaton of Cusp Magnetic Field Character;
勾形磁场中直拉硅单晶的模拟与磁场参数优化
12.
Effect of Vacancy on Nucleation for Oxygen Precipitation in Czochralski Silicon;
空位对直拉硅单晶中氧沉淀形核的作用
13.
Oxygen Precipitation Behaviors in Conventional and Nitrogen-codoped Heavily Arsenic-doped Czochralski Silicon;
普通和掺氮的重掺砷直拉硅单晶的氧沉淀行为
14.
Effects of Nitrogen and Vacancy on the Oxygen Precipitation in Czochralski Silicon;
氮和空位对直拉单晶硅中氧沉淀的影响
15.
Improvement of Φ8" Hot Zone for Φ8" CZSi and the Numeric Simulaion;
生长Φ8“直拉硅单晶Φ8”热场研究及数值模拟
16.
Study on the Flow Pattern Defects (FPDs) in the CZ Silicon Crystals;
大直径CZ硅单晶中流动图形缺陷（FPDs）的研究
17.
Influence on carbon and oxygen contents in CZ Si single crystals by improvement of thermal system of furnace
直拉硅单晶炉热系统的改造对氧、碳含量的影响
18.
Performance of Micro One-sided Straight-leg Beam Resonator and Cascade V-Shape Thermal Actuator;
硅微单侧直脚谐振器与复合V型梁热致动器的机械性能研究