1.
Study of Band Gap Broadening Method and Waveguide Transmission Property of Photonic Crystal Formed by Holographic Lithography
全息光子晶体禁带展宽方法和波导传输特性的研究
2.
Recent Development and Future Perspective of Silicon Carbide Power Devices--Opportunity and Challenge
宽禁带半导体SiC功率器件发展现状及展望
3.
Development of Solar-blind Ultraviolet Detectors Based on Wide Bandgap Semiconductors
宽禁带半导体日盲紫外探测器研究进展
4.
Widening of PBG in 1D Photonic Crystal and Design of Filter;
一维光子晶体禁带扩宽及滤波器设计
5.
Design of a GaN HEMT Class F Power Amplifier
宽禁带GaN HEMT F类功率放大器设计
6.
Studies of Impurities in a Wide Band Semiconductor SiC
宽禁带SiC材料中杂质的分析研究
7.
spread variable capacitor
频带展宽可变电容器
8.
The first order forbidden energy?band width is the biggest when cylindrical radius is about 40 ?.
圆柱半径在40 左右时,第一禁带宽度最大。
9.
Preparation and Doping of Wide Band Gap Cubic Boron Nitride Films;
宽禁带立方氮化硼薄膜的制备与掺杂研究
10.
Characterization for the Structures and Properties of Wide Bandgap Semiconductor In_2O_3 by First-principle Calculations
宽禁带半导体In_2O_3结构和性能的第一性原理研究
11.
Zhao Zisen Broadband Service Development and Network Construction in China;
我国发展宽带业务及建设宽带网的探讨
12.
Study for Widing Impendance Band of Spacebome Circular Microstrip Antenna
展宽星载圆形微带天线阻抗带宽的方法探究
13.
1. For a certain apodization function, the band width, steepness of the band
1. 对于同一切趾函数，光栅反射谱的禁带宽度、禁带边缘陡峭性和旁瓣
14.
A Novel Feeding Scheme for Bandwidth Enhancement of Patch Antenna
一种新型的用于展宽贴片天线带宽的馈电方式
15.
Development trends of boardband network and boardband network devices during the transitional period.
转型时期宽带网络的发展趋势，宽带网络设备的发展趋势。
16.
Silicon and germanium, for instance, have forbidden bands whose widths are 1.1 and 0.65eV, respectively.
例如，硅和锗的禁带宽度分别为1．1电子伏和0．65电子伏。
17.
Study of Transparent Conducting CdO Thin Films with a Tunable Band-gap Deposited on Organic Substrates;
有机衬底上沉积禁带宽度可调的CdO透明导电薄膜
18.
Fabrication of Wide-band Semiconductor Nanostructures and Study of Its Field Emission Application;
宽禁带半导体纳米结构制备及其场发射应用研究