1.
Study on AlGaN/GaN MOS-HEMT's Characteristics
AlGaN/GaN MOS-HEMT器件特性研究
2.
High Performance 0.18 μm T-gate GaAs Metamorphic HEMTs with f_t of 136 GHz
具有136GHz的0.18m GaAs Metamorphic HEMT器件
3.
Characteristic of AlGaN/GaN Heterostructures and of High Electron Mobility Transistors
AlGaN/GaN异质结材料特性与HEMT器件研究
4.
Influence of ~(60)Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors
~(60)Co γ射线辐射对AlGaN/GaN HEMT器件的影响
5.
Temperature characteristics of AlGaN/GaN MOS-HEMT with Al_2O_3 gate dielectric
Al_2O_3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究
6.
The Study on the Physical Model and Key Process Technologies of AlGaN/GaN HEMT;
AlGaN/GaN HEMT器件物理模型和关键工艺技术研究
7.
Research on AlGaN/GaN Hemt Microwave Power Characteristics and the Internal Matching Technology;
AlGaN/GaN HEMT器件微波功率特性与内匹配技术研究
8.
Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs
高场应力及栅应力下AlGaN/GaN HEMT器件退化研究
9.
Low Noise Amplifier Design Based on GaAs HEMT;
基于GaAs HEMT的低噪声放大器设计
10.
Design of a GaN HEMT Class F Power Amplifier
宽禁带GaN HEMT F类功率放大器设计
11.
Low Noise Amplifier Design and Achieve Based on GaAs HEMT
基于GaAs HEMT的低噪声放大器设计与实现
12.
Design and Implementation of a Compact HEMT Oscillator at Ku Band
小型化Ku波段HEMT振荡器的设计与实现
13.
The Research of RTD/HEMT/MSM s Optoelectrical Integration;
RTD/HEMT/MSM光电集成研究
14.
Crossed-field devices(M-type devices)
正交场器件(M型器件)
15.
Microwave Power Characteristics of AlGaN/GaN HEMT;
AlGaN/GaN HEMT微波功率特性研究
16.
Study of Schottky Charactaristic of High Performance AlGaN/GaN HEMT;
高性能AlGaN/GaN HEMT肖特基特性的研究
17.
Studies on Properties and Measurement of AlGaN/GaN Based HEMT Materials;
AlGaN/GaN基HEMT材料性能与测试技术的研究
18.
Study on the Key Fabrication Techniques of High-Power AlGaN/GaN HEMT;
大功率AlGaN/GaN HEMT关键制作工艺的研究