1.
Influence of Optical Phonons on the Electronic Mobility in a Strained Wurtzite AlN/GaN Heterojunction under Hydrostatic Pressure;
压力下光学声子对应变纤锌矿AlN/GaN异质结中电子迁移率的影响
2.
Energy of Bound Polaron in Wurtzite GaN/AlN Quantum Well
纤锌矿GaN/AlN量子阱中束缚极化子能量
3.
First-principle Calculation of Electronic Structure of Wurtzite ZnO Crystal
纤锌矿型氧化锌电子结构的第一性原理计算
4.
Models of Compensation Ratio and Mobility of Wurtzite n-GaN;
纤锌矿n-GaN的补偿度及迁移率模型
5.
Monte-carlo Simulation on Four-valley Model Wurtzite ZnO;
基于多能谷纤锌矿相ZnO的Monte-Carlo模拟
6.
Carrier Transport in Wurtzite GaN Using Monte Carlo Method;
纤锌矿GaN载流子输运的蒙特卡罗模拟
7.
The Energy of an Exciton in a Wurtzite GaN/Al_xGa_(1-x)N Quantum Well
纤锌矿GaN/Al_xGa_(1-x)N量子阱中激子能量
8.
First-principle Study of Electronic and Optical Properties of Wurtzite Structure GaN
纤锌矿GaN光电性质的第一性原理研究
9.
Quasiparticle band structures of wurtzite ZnO
纤锌矿结构ZnO的准粒子能带结构(英文)
10.
With increasing pressure,the wurtzite structre was transformed to zinc blende structure at 11.2 GPa.
压力达到11.2 GPa时,纳米硫化锌空心球中的纤锌矿结构全部转变为闪锌矿结构。
11.
The raw materials contain two structures of ZnS,which are wurtzite and zinc blende respectively.
常压下纳米硫化锌球壳为纤锌矿结构和闪锌矿结构共存的混相结构。
12.
Energy of the Bound Polaron in Wurtzite GaN/Al_xGa_(1-x)N Quantum Well;
纤锌矿GaN/Al_xGa_（1-x）N量子阱中束缚极化子能量
13.
Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots
纤锌矿氮化物半导体椭球形量子点杂质态
14.
Pressure and Polaron Effect on the Binding Energies of Impurity States in Wurtzite Nitrides Semiconductor;
纤锌矿氮化物半导体杂质态的结合能及压力和极化子效应
15.
First-principles Study of Cadmium Sulfide Clusters and S Doped Wurtzite ZnO;
硫化镉团簇与S掺杂纤锌矿ZnO的第一性原理研究
16.
The Full Band Ensemble Monte Carlo Simulation of Hole Transport Properties for Wurtzite GaN;
纤锌矿相GaN材料空穴输运特性的全带多粒子Monte Carlo模拟研究
17.
Phase Transition,Elastic Property and Electronic Structure of Wurtzite and Rocksalt ZnO
纤锌矿和岩盐结构ZnO的相变、弹性性质和电子结构研究
18.
First-principles study of the crystal structures and electronic properties of S doped wurtzite ZnO
S掺杂纤锌矿ZnO晶体结构及电子性质的第一性原理研究