1.
Electrons and Holes in Semiconductors
《半导体中的电子和空穴》
2.
rate of generation
半导体中电子和空穴的
3.
The motion of electrons or holes in semiconductor in electric field.
半导体中电子或空穴在电场中的运动。
4.
A charge - carrying entity, especially an electron or a hole in a semiconductor.
带电体带电体，尤指一个半导体中的电子或孔穴
5.
A vacant position in a crystal left by the absence of an electron, especially a position in a semiconductor that acts as a carrier of positive electric charge.
空穴在晶体中由于没有电子而造成的空位，尤指在半导体中可当作正极使用的空位
6.
Majority Carrier- A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
7.
Hole is an charged electronic entity in semiconductors and insulators which have energies less than the Fermi level and participate in the electric conduction.
空穴是半导体和绝缘体中的一种带电体，其能量小于费米能，并且参与导电。
8.
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
在半导体材料中维持电流的最小单元,在P型硅中是空穴,在N型硅中是自由电子。
9.
This equationis based on the hypothesis that the recombination of electron-hole pairs indirect band semiconductors is perfect optical transition without any others.
这公式是基于在直接带半导体中电子—空穴对复合全部是光跃迁的假设的。
10.
Bipolar- Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管-能够采用空穴和电子传导电荷的晶体管。
11.
Hole Compensation Effect and A-site Radius Effect Studies on La-based Cuprate Superconductors
铜氧化物高温超导体空穴补偿效应和A位平均离子半径效应研究
12.
ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ) WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI
立方半导体中双空位态的电子结构(Ⅲ) 硅中双空位态的波函数
13.
Exciton and Impurity State in Semiconductor Quantum Wells in an Electric Field;
外电场下半导体量子阱中的激子和杂质态
14.
The Study on Defects in ZnO and GaN Wide Band Gap Semiconductors Using Positron Annihilation Techniques;
正电子对ZnO和GaN宽带隙半导体中缺陷的研究
15.
equipment that involves the controlled conduction of electrons (especially in a gas or vacuum or semiconductor).
控制受限的电子传导的设备（尤其是在空气中或在真空中或在半导体中）。
16.
The density of holes in the base is less than the density of free electrons in the emitter and collector.
基极中空穴的密度小于发射极和集电极中自由电子的密度。
17.
Electronic structure of 60°edge dislocation in semiconductor material Ge
半导体锗中60°棱位错的电子结构
18.
Influence of Micro-Defects and Eletronic Structure in the Silicon-Based Semiconductor on Photoelectric Property of the Materials;
硅基半导体中微观缺陷和电子结构对材料光电性能的影响