1.
Growth and Characterization of Rare Earth Metal Doped GaN Films by Electron Cyclotron Resonance Plasma Assisted Pulsed Laser Deposition
等离子体辅助脉冲激光沉积和原位掺杂方法制备稀土掺杂GaN薄膜
2.
On the Physical Performance of TiO_2 Photocatalytic Film Made by Two Metals Adulteration
两种金属掺杂方法下TiO_2光催化薄膜的物理性能
3.
Method to restains the emergence of foreign crystals by doped TGS crystals
掺杂TGS晶体抑制杂晶方法的研究
4.
Study on Synthesis and Modification with Doping of Nano-sized TiO_2;
纳米TiO_2的制备方法与掺杂改性研究
5.
Study on the Mechanism and Method of P-type Doping in GaN;
GaN材料P型掺杂机理及方法的研究
6.
"Adding Impurity" Usually Used in Chemical Experiment;
在化学实验中常用的方法——“掺杂”
7.
Synthesis of Cobalt-Doped AlN Nanorod by Arc Discharge
电弧放电方法制备Co掺杂AlN纳米棒
8.
Preparation of Doped Vanadium Dioxide and Effects on Its Properties
掺杂VO_2的制备方法及其对性能的影响
9.
Doping mechanism and preparing technology of p-type ZnO
氧化锌薄膜的p型掺杂及其制备方法
10.
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T14847-1993重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
11.
The well doped low density material was made by this means.
采用此种方法,可得到掺杂均匀的低密度材料。
12.
Calculation Study on the Band Structures of Doped Titanium Dioxide;
计算机模拟方法在TiO_2掺杂研究中的应用
13.
Investigation on Method of Phonon Scattering in Isotope-doped Si;
同位素掺杂硅声子散射的研究方法探讨
14.
Novel Method for Calculating Base Doping Concentration of Field Stop IGBT
场终止型IGBT基区掺杂浓度计算的新方法
15.
Possible problems and solutions of doping modification for LiFePO_4
LiFePO_4掺杂改性可能存在的问题及解决方法
16.
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
GB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法
17.
Study on Synthesis and Doping of High Quality Cubic Boron Nitride Thin Films by Two-Step Approach;
两步法高质量立方氮化硼薄膜的制备和掺杂研究
18.
Investigating Theoretically Doping Silicon Nitride Layer of SONOS Device by DFT Method;
基于DFT方法的SONOS存储器件氮化硅层掺杂理论研究