1.
lithium drifted germanium semiconductor detector
锂漂移锗半导体探测器
2.
Electronic structure of 60°edge dislocation in semiconductor material Ge
半导体锗中60°棱位错的电子结构
3.
Platelike structures of semiconductor clusters Ge_n(n=40-44)
盘型半导体锗团簇(Ge40-Ge44)的研究
4.
"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."
常用的本质半导体是硅、锗以及砷化镓等的单晶。
5.
The Mechanism of No Phonon Optical Transitions in SiGe Alloy
锗硅合金半导体中无声子参与光跃迁机制研究
6.
Solar cell industry and application of silicon germanium thin film;
太阳能电池产业与半导体锗硅薄膜的应用综述
7.
Germanium is a semiconductor material with its conductivity lying between that of conductors and that of insulators .
锗是一种半导体材料，其导电系数介于导体与绝缘体之间。
8.
Growth of Single-CdGeAs_2 and Research by Density Functional Theory;
黄铜矿半导体砷化锗镉晶体的生长和密度泛函理论研究
9.
Among semiconductors are chemical elements like germanium and silicon, and a lot of chemical compounds such as oxides .
像锗和硅这样的化学元素以及许多化合物，如氧化物，都是半导体。
10.
Doped silicon and germanium are technologically the most important types of semiconducting material.
添加硅和锗在工艺上是半导体物质中最重要的类型。
11.
Ab Initio Study of Carbon-related and Self-interstitial Defects in Si and SiGe Alloy Semiconductors;
硅和硅锗合金半导体中碳相关缺陷和自间隙缺陷的从头计算研究
12.
Nanoparticle and nanolayer in oxide film and substantial Ge segregation;
半导体锗纳米团簇和纳米层的生成结构与PL谱研究
13.
Electronic Structure and Magnetism of Ge-based and HfO_2-based Ferromagnetic Semiconductors
锗基与二氧化铪基铁磁半导体的电子结构和磁性研究
14.
There exist on the earth hundreds of semiconductors, among which only two can be used to make transistors. They are silicon and germanium.
地球上有数百种半导体，其中只有两种能用来制造晶体管。它们是硅和锗。
15.
Many useful results can be obtained in the investigation on viscosity of Si, Ge melt by rotary oscillating.
利用回转振动法对硅、锗等半导体熔体的粘度进行测试分析，获得许多有意义的结果。
16.
"Germanium: Chemical element with physical properties similar to silicon, used especially in semiconductor devices. "
锗:周期表IVa族中硅与锡之间的化学元素,化学符号Ge,常用在半导体装置中。
17.
semiconductor element
半导体元件[管芯]
18.
Standard test methods for minority carrier lifetime in bulk germanium and silicon silicon by measurement of photoconductivity decay
GB/T1553-1997硅和锗体内少数载流子寿命测定光电导衰减法