1.
carbide whisker reinforced meta
碳化物晶须强化金属
2.
Non-Twin Strengthening and Toughening Mechanism for Cold-Weld Deposited Metall of High Carbon Alloy Steel;
冷焊态高碳合金钢型熔敷金属无孪晶强化及增韧
3.
inorganic carbide (excl. calcium carbide and precide and precious metal carbides)
无机碳化物（不包括碳化钙及贵金属碳化物）
4.
Study of the Growth of SiC Crystals with Different Morphologies in Matal-silicide Fluxes;
金属硅化物熔体中不同形貌碳化硅晶体的生长研究
5.
injection or compression type of moulds for metals or metal carbides
金属或金属碳化物注模或压模
6.
mnos transistor
金属氮化物氧化物半导体晶体管
7.
Study of Damping Capacities in Silicon Carbon Whisker Reinforced Magnesium Matrix Composite;
碳化硅晶须增强镁基复合材料阻尼性能研究
8.
"Carbide: Inorganic compound, any of a class of chemical compounds in which carbon is combined with a metal or semimetallic element. "
碳化物: 碳与金属或半金属元素化合而成的一类化合物的总称。
9.
" Carbide： Inorganic compound, any of a class of chemical compounds in which carbon is combined with a metal or semimetallic element. "
碳化物:碳与金属或半金属元素化合而成的一类化合物的总称。
10.
Transition metal nitrides/carbides are sorted as interstitial compounds and known as "platinum-like metal" owing to their similar surface and catalytic properties to those of noble metals platinum and rhodium.
介绍了过渡金属氮化物／碳化物独特的晶体结构和电子性能及其与催化性能的内在联系。
11.
a compound containing metal combined with carbon monoxide.
含有结合了一氧化碳的金属的化合物。
12.
The result of the XRD indicated that the production structure was wurtzite, which was mixed with hydrocarbon.
射线衍射结果表明，掺入了碳氢化合物的反应产物的晶须属六方纤锌矿结构。
13.
metal oxide semiconductor transistor
金属—氧化物—半导体晶体管金属氧化物半导体晶体管
14.
Nano-Crystallization Alloy Obtain from Amorphous Alloy FeCuNbSiB by the Shock Wave;
非晶金属的激波微晶晶化、纳米晶化
15.
Unique chemical properties of metal-carbon bonds in metal-carboranyl and metal-carboryne complexes
碳硼烷和碳硼炔金属配合物中金属-碳键的化学性质
16.
Oxidation Behaviors of Poly- and Single Crystalline Transition-Metal Disilicides;
过渡族金属二硅化物单晶和多晶的氧化
17.
Research Progress of Metal Nitrides/Metal Carbides Hydrogenation Catalyst
金属氮化物/碳化物加氢催化剂研究进展
18.
The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes.
用于增强和取代多晶硅的难熔金属和难熔金属硅化物通常是用物理蒸发沉积工艺沉积的。